MRFE6S9201HSR5

Overview

The MRFE6S9201HSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at 28 Vdc with a drain-source voltage rating of 66 Vdc. The device delivers 40 Watts average output power in single-carrier N-CDMA configurations at 880 MHz, achieving a typical power gain of 20.8 dB and drain efficiency of 31.3%. It features internal input matching, integrated ESD protection, and qualified operation up to 32 Vdd.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Greater negative gate-source voltage range for improved Class C operation

Applications

• Broadband commercial base station equipment
• Industrial amplifier applications
• Large-signal common-source amplifier designs

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details. Ensure the ordering code matches the required reel specifications. Confirm RoHS compliance status through current manufacturer declarations. Validate that the component meets all environmental operating temperature ranges specified in the datasheet before procurement.

Selection Notes

Select this component for high-gain, broadband RF power amplification requiring ruggedness. Consider the 28 Vdc nominal supply and 66 Vdc breakdown limits. Evaluate thermal resistance characteristics for heat dissipation requirements. Verify impedance parameters for matching network design within the 865-900 MHz bandwidth.

Part Context

This part belongs to the Freescale Semiconductor MRFE6S series of RF power lateral MOSFETs. These devices are engineered for high performance in cellular infrastructure. The NI-780 package provides robust mounting options for high-power applications. The series supports various modulation schemes including CDMA and GSM EDGE.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts and thermal characteristics carefully.