MRFE6S9205HR3

Overview

The MRFE6S9205HR3 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 66 Vdc and a gate-source voltage of 12 Vdc, with a maximum junction temperature of 225 °C. In single-carrier W-CDMA tests at 880 MHz with 28 Vdc supply and 1400 mA quiescent current, it delivers 58 Watts average output power with 21.2 dB gain and 34% drain efficiency. The device handles 10:1 VSWR at 32 Vdc and 880 MHz with 260 Watts CW output. It features integrated ESD protection and is supplied in tape and reel packaging.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched input for simplified circuit design
• Integrated electrostatic discharge (ESD) protection
• Qualified for operation up to 32 VDD

Applications

• Large-signal common-source amplifiers in 28 volt base station equipment
• Broadband commercial and industrial applications up to 1000 MHz
• Single-carrier W-CDMA signal processing

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package style and quantity. The R3 suffix indicates a 250-unit reel on a 56 mm, 13 inch carrier. Confirm RoHS compliance status and material declarations prior to integration. Ensure thermal management meets the specified junction temperature limits during operation.

Selection Notes

Select this component for high-gain, broadband RF power amplification requiring ruggedness under high VSWR conditions. Evaluate thermal resistance characteristics relative to the expected case operating temperature. Verify that the internal matching network aligns with the system impedance requirements without additional external components.

Part Context

This device belongs to the Freescale Semiconductor RF Power Field Effect Transistors family, specifically categorized as N-Channel Enhancement-Mode Lateral MOSFETs. It utilizes the NI-880 surface mount package. The product line targets high-performance wireless infrastructure and industrial radio frequency applications.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility.

FAQ

What is the maximum continuous wave output power capability under high VSWR conditions?

The device is capable of handling 10:1 VSWR at 32 Vdc and 880 MHz, delivering 260 Watts CW output with a 3 dB input overdrive from the rated power.

How is the input matching configured for this transistor?

The MRFE6S9205HR3 is internally matched on the input side to facilitate ease of use and simplify the amplifier design process.

What are the typical performance metrics for single-carrier W-CDMA signals?

At 880 MHz with 28 Vdc and 1400 mA quiescent current, it provides 58 Watts average output power, 21.2 dB power gain, and 34% drain efficiency.