MRFE6VP100HR5

Overview

The MRFE6VP100HR5 is a broadband RF power LDMOS transistor manufactured by NXP USA Inc. It operates within the frequency range of 1.8 to 2000 MHz and delivers an output power of 100 W at a drain voltage of 50 V. Designed for both narrowband and broadband applications, this component supports ISM, broadcast, and aerospace sectors. The device utilizes lateral N-channel technology to provide reliable performance across its specified operational bandwidth.

Feature Summary

• Broadband operation spanning from 1.8 MHz to 2000 MHz
• Lateral N-channel LDMOS construction for high reliability
• Optimized for linear amplification in demanding environments

Applications

• Industrial, Scientific, and Medical (ISM) equipment
• Broadcast transmission systems
• Aerospace communication infrastructure

Procurement Notes

Verify current lifecycle status with authorized distributors as availability may vary. Confirm RoHS compliance and environmental declarations prior to integration. Ensure sourcing channels are NXP-authorized to guarantee authenticity and traceability. Review datasheet specifications for handling and soldering requirements to maintain device integrity during assembly processes.

Selection Notes

Select this component for designs requiring wideband coverage up to 2 GHz with moderate power output. Evaluate thermal management capabilities to sustain 100 W performance. Consider package compatibility and drive level requirements relative to system architecture. Compare against alternative LDMOS devices if specific frequency or power constraints differ from the 1.8–2000 MHz range.

Part Context

This part belongs to the MRFE6VP series of broadband RF power transistors. It complements higher-power variants like the MRFE6VP5600H while offering broader frequency reach than narrowband models. The series targets robust linear amplifier solutions for critical communication and industrial sectors requiring stable performance across wide spectral bands.