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The MRFE6VP100HSR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET RF power transistor designed for narrowband and broadband industrial, scientific, medical (ISM), broadcast, and aerospace applications. Operating across a frequency range of 1.8 to 2000 MHz, the device utilizes Freescale's enhanced ruggedness platform to withstand high voltage standing wave ratios (VSWRs). It delivers 100 W of continuous wave output power at 512 MHz with a drain efficiency of 70% under a 50 V supply. The component features integrated stability enhancements and electrostatic discharge protection.
Verify the specific suffix HSR5 indicates tape and reel packaging containing 50 units on a 56 mm tape width and 13 inch reel. Confirm the component status remains active as the original manufacturer transitions product lines. Ensure compatibility with NI-780S-4 package requirements during procurement planning.
Select this transistor for applications demanding high power density and robust performance under mismatched load conditions. The device supports balanced configurations with dual gate and drain terminals. Designers must account for thermal management using the specified junction-to-case thermal resistance values to maintain optimal operation within the maximum temperature ratings.
This component belongs to the MRFE6VP series of RF power LDMOS transistors developed by Freescale Semiconductor. The series targets high-power RF applications where reliability under harsh electrical conditions is critical. The MRFE6VP100HSR5 represents a specific packaging variant optimized for automated surface-mount assembly processes.
Consult official documentation for direct substitutes. Verify pinout compatibility and thermal characteristics when considering alternative components from other manufacturers.