MRFE6VP5150NR1

Overview

The MRFE6VP5150NR1 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wideband RF power applications. It operates across a frequency range of 1.8 to 600 MHz with a drain-source voltage rating of 133 Vdc and a maximum total device dissipation of 952 W at 25°C case temperature. The transistor delivers 150 W CW output power at 230 MHz and up to 179 W in the 87.5–108 MHz band, both at 50 Vdc. It features unmatched input and output designs, integrated stability enhancements, and ESD protection circuitry.

Feature Summary

• Extreme ruggedness capable of withstanding high VSWR conditions without device degradation
• Unmatched input and output designs enabling wide frequency range utilization from 1.8 to 600 MHz
• Integrated stability enhancements and ESD protection circuitry

Applications

• High VSWR industrial applications including laser and plasma exciters
• Broadcast systems supporting analog and digital signals
• Aerospace radio and land mobile communication equipment

Procurement Notes

Verify component authenticity through authorized channels as the MRFE6VP5150N series is listed as End of Life. Confirm package integrity and moisture sensitivity level (MSL 3) prior to soldering. Ensure compliance with EU RoHS standards and check for REACH SVHC presence. Validate that the R1 suffix corresponds to the specified tape and reel packaging configuration.

Selection Notes

Select this component for designs requiring high power density and broadband operation between 1.8 and 600 MHz. Consider the TO-270WB-4 plastic package for thermal management capabilities. Evaluate the need for external biasing circuits to maintain optimal quiescent current. Assess system requirements against the 133 Vdc drain-source voltage limit and junction temperature constraints.

Part Context

This device belongs to the Freescale Semiconductor RF Power LDMOS Transistors family, specifically engineered for high ruggedness. It serves as an N-channel enhancement-mode lateral MOSFET suitable for demanding RF environments. The product line emphasizes performance in wideband applications where reliability under mismatched load conditions is critical.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is -0.5 to +133 Vdc.

How does the device perform under extreme load mismatch?

The device exhibits extreme ruggedness, showing no degradation when subjected to VSWR greater than 65:1 at all phase angles with 3 dB overdrive.

What ESD protection levels are supported?

The device supports Human Body Model testing up to 2500 V, Machine Model testing up to 250 V, and Charge Device Model testing up to 1200 V.