MRFE6VP5600HR6

Overview

The MRFE6VP5600HR6 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for broadband RF power applications. It operates across a frequency range of 1.8 to 600 MHz with a maximum drain-source voltage of 130 Vdc and a continuous wave output power of 600 W at 50 Vdc. The device features unmatched input and output designs, allowing wide frequency utilization in single-ended or push-pull configurations. It includes integrated ESD protection and is characterized from 30 V to 50 V for extended power ranges.

Feature Summary

• Unmatched input and output designs enabling wide frequency range utilization between 1.8 and 600 MHz
• High ruggedness capability capable of handling load mismatches up to 65:1 VSWR at all phase angles
• Integrated ESD protection with an extended negative gate-source voltage range for improved Class C operation

Applications

• Industrial applications including laser and plasma exciters
• Broadcast systems supporting analog and digital signals
• Aerospace communication equipment
• Radio and land mobile infrastructure

Procurement Notes

Verify the specific suffix R6 indicates tape and reel packaging containing 150 units on a 56 mm tape width and 13 inch reel. Confirm RoHS compliance status through official manufacturer documentation prior to procurement. Ensure the component meets environmental standards required for the intended deployment environment.

Selection Notes

Select this component for designs requiring high power density and broad bandwidth without complex matching networks. Evaluate thermal management requirements based on junction-to-case resistance values under pulsed and continuous wave conditions. Consider the device's suitability for linear applications when appropriate biasing circuits are implemented.

Part Context

This part belongs to the MRFE6VP5600H family of high ruggedness LDMOS transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The family shares core electrical characteristics but differs in packaging options such as the R5 and R6 tape and reel variants. These devices are engineered for demanding RF environments requiring robust performance over wide frequency spans.

Replacement Considerations

MRFE6VP5600HSR6 serves as a direct package variant within the same family offering identical electrical specifications.

FAQ

What is the maximum load mismatch the device can withstand?

The device is capable of handling a load mismatch of 65:1 VSWR at 50 Vdc and 230 MHz at all phase angles.

Can this transistor be used in a push-pull configuration?

Yes, the device can be utilized in either single-ended or push-pull configurations due to its unmatched input and output design.

What is the operating junction temperature limit?

The maximum operating junction temperature is specified as 225 °C.