MRFE6VP61K25GSR5

$178.96

Description：RF MOSFET LDMOS 50V NI1230
Series：-

SKU:89dd12240356 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V NI1230
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：230MHz
Gain：24dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：100 mA
Power - Output：1250W
Voltage - Rated：133 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-1230S-4 GW
Supplier Device Package：NI-1230S-4 GULL
Configuration：-

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MRFE6VP61K25GSR5

Overview

The MRFE6VP61K25GSR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wide frequency range utilization between 1.8 and 600 MHz. It operates with a maximum drain-source voltage of 50 Vdc and delivers up to 1250 W continuous wave output power at 230 MHz. The device features unmatched input and output designs, allowing single-ended or push-pull configurations. It includes integrated ESD protection suitable for linear applications with appropriate biasing.

Feature Summary

High ruggedness construction engineered for demanding environments
Wide frequency range utilization from 1.8 to 600 MHz
Integrated electrostatic discharge protection for improved operational reliability

Applications

High VSWR industrial applications including laser and plasma exciters
Analog and digital broadcast systems
Aerospace communication equipment
Radio and land mobile communications infrastructure

Procurement Notes

Verify the specific ordering suffix GSR5 confirms the gull-wing package configuration and tape-and-reel delivery format. Confirm that the component meets all required environmental standards and material declarations prior to final procurement authorization.

Selection Notes

Select this component when designing circuits requiring high power density across broad bandwidths. Ensure thermal management solutions support the specified junction temperature limits. Validate impedance matching networks against the provided series equivalent large-signal parameters for optimal performance.

Part Context

This part belongs to the MRFE6VP61K25H family of RF Power LDMOS Transistors. It shares core electrical characteristics with variants such as MRFE6VP61K25HR5 and MRFE6VP61K25HSR5, differing primarily in packaging style and reel specifications.