MRFE6VP61K25HR6

Overview

The MRFE6VP61K25HR6 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wide frequency range utilization between 1.8 and 600 MHz. It operates with a maximum drain-source voltage of 50 Vdc and delivers up to 1250 W continuous wave output power at 230 MHz. The device features unmatched input and output designs, allowing flexible single-ended or push-pull configurations. It includes integrated ESD protection suitable for linear applications and Class C operation.

Feature Summary

• High ruggedness construction engineered for demanding environments including high VSWR industrial, broadcast, aerospace, and land mobile applications.
• Unmatched input and output design enabling broad frequency range utilization across the 1.8 to 600 MHz spectrum.
• Integrated electrostatic discharge (ESD) protection providing an extended negative gate-source voltage range to improve Class C operation suitability.

Applications

• High VSWR industrial applications such as laser and plasma exciters
• Analog and digital broadcast systems
• Aerospace communication equipment
• Radio and land mobile infrastructure

Procurement Notes

Verify the specific suffix HR6 against official documentation to confirm packaging details. The R6 suffix indicates tape and reel delivery containing 150 units on a 56 mm width, 13-inch reel. Confirm current manufacturing status and availability through authorized NXP distributors, as product lifecycles may change without notice.

Selection Notes

Select this component for wideband RF power amplification requiring high ruggedness and significant output power within the sub-ghz to vhf bands. Ensure thermal management supports the specified junction temperature limits. Validate impedance matching networks using the provided series equivalent large-signal impedance parameters for optimal performance in both single-ended and balanced configurations.

Part Context

This part belongs to the MRFE6VP61K25H family of wideband RF power LDMOS transistors. It shares core electrical characteristics with variants like the MRFE6VP61K25HR5 and MRFE6VP61K25HSR5, differing primarily in package type and shipping configuration. The family is characterized by its ability to handle extreme load mismatches while maintaining stable operation under high voltage conditions.

Replacement Considerations

MRFE6VP61K25HR5

FAQ

What is the maximum operating junction temperature for the MRFE6VP61K25HR6?

The maximum operating junction temperature is 225 °C.

Can the MRFE6VP61K25HR6 be used in a push-pull configuration?

Yes, the device can be used in either single-ended or push-pull configurations due to its unmatched input and output designs.

What is the typical drain efficiency at 230 MHz CW operation?

The typical drain efficiency is 74.6% when operating at 230 MHz with 1250 W CW output power and a 50 V supply.