MRFE6VP6300HR3

Overview

The MRFE6VP6300HR3 is a lateral N-channel broadband RF power MOSFET manufactured by NXP Semiconductors. It operates within the 1.8 to 600 MHz frequency range and delivers 300 W of output power at a 50 V supply voltage. The device utilizes silicon technology and is housed in the CFM4F package. This component is classified as an RF Power Field Effect Transistor designed for high-power radio frequency applications.

Feature Summary

• Broadband operation across the 1.8 to 600 MHz spectrum
• High power output capability of 300 W
• Lateral N-channel silicon construction
• Designed for robust RF power amplification

Applications

• RF power amplifier circuits
• Broadband transmission systems
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific suffix HR3 against official NXP documentation to confirm package type and reel configuration. Confirm current manufacturing status, as availability may vary. Ensure compatibility with existing thermal management solutions and circuit designs before procurement.

Selection Notes

Select this component for applications requiring wide bandwidth coverage from 1.8 MHz to 600 MHz. Consider the 300 W power rating and 50 V operating voltage when designing matching networks. Evaluate the CFM4F package constraints for PCB layout and thermal dissipation requirements.

Part Context

This part belongs to the MRFE6VP series of lateral N-channel broadband RF power MOSFETs. It shares architectural similarities with other devices in the family, such as the MRFE6VP6300H, but differs in specific packaging and ordering suffixes. The series targets high-efficiency RF power amplification.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.