MRFE6VP6300HR5

Overview

The MRFE6VP6300HR5 is a high ruggedness N-Channel Enhancement-Mode Lateral MOSFET designed for broadband RF power applications. It operates across a frequency range of 1.8 to 600 MHz with a maximum drain-source voltage of 130 Vdc and a total device dissipation of 1050 W at 25°C case temperature. The component delivers 300 Watts CW output power at 130 MHz and 300 Watts Pulsed Peak Power (20% duty cycle, 100 μsec) at 230 MHz. It features integrated ESD protection rated Class 2 for the Human Body Model and is characterized from 30 V to 50 V for extended power range utilization.

Feature Summary

• Unmatched input and output designs enabling wide frequency range utilization between 1.8 and 600 MHz
• Capable of handling a load mismatch of 65:1 VSWR at all phase angles under specified operating conditions
• Suitable for linear application with appropriate biasing in single-ended or push-pull configurations

Applications

• High VSWR industrial applications including laser and plasma exciters
• Broadcast applications supporting analog and digital signals
• Aerospace systems requiring robust RF power amplification
• Radio and land mobile communication equipment

Procurement Notes

Verify the specific suffix configuration against official documentation to ensure correct packaging specifications. Confirm that the sourcing channel provides valid manufacturer traceability for this RF power component. Ensure compliance with relevant environmental standards such as RoHS requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high ruggedness and broad bandwidth operation up to 600 MHz. Evaluate thermal management strategies carefully given the high junction temperature capabilities and power dissipation ratings. Consider the device's suitability for linear modes when designing amplifier stages for broadcast or aerospace environments.

Part Context

This part belongs to the MRFE6VP6300H series of lateral N-channel broadband RF power MOSFETs manufactured by NXP Semiconductors. The R5 suffix indicates a specific tape and reel packaging option containing 50 units on a 13-inch reel with a 56 mm tape width. This packaging variant supports automated surface-mount assembly processes.

Replacement Considerations

Consult official replacement guides for cross-reference options. Verify compatibility regarding pinout, package dimensions, and electrical characteristics if substituting with other RF power MOSFETs.