MRFE6VP6300HSR3

Overview

The MRFE6VP6300HSR3 is a lateral N-channel broadband RF power MOSFET from the MRFE6VP6300H series, manufactured by NXP Semiconductors. It operates within a frequency range of 1.8 to 600 MHz and delivers 300 W of output power at a 50 V supply voltage. The component utilizes the CFM4F package and is designated as an end-of-life product.

Feature Summary

• Lateral N-channel broadband RF power MOSFET technology
• High power capability of 300 W at 50 V
• Broad operational frequency range from 1.8 to 600 MHz

Applications

• Sub-GHz development tool reference circuits
• Broadband RF power amplifier designs
• Evaluation of high-power RF performance

Procurement Notes

Verify current availability status as this part is listed as End of Life. Confirm RoHS compliance documentation via Certificate of Analysis. Check for lead-free soldering specifications and REACH SVHC declarations before integration into new designs.

Selection Notes

Select this component for applications requiring high power density in the sub-GHz to UHF bands. Ensure thermal management supports the 300 W output. Consider the end-of-life status for long-term production viability and potential obsolescence risks.

Part Context

This device belongs to the MRFE6VP6300H family of lateral N-channel MOSFETs. It shares core electrical characteristics with variants like the MRFE6VP6300HR3 and MRFE6VP6300-230, differing primarily in packaging or specific reference circuit configurations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Evaluate the MRFE6VP6300HR3 or MRFE6VP6300-230 for functional equivalence, noting their respective manufacturing statuses.