MRFE6VP6300HSR5

Overview

The MRFE6VP6300HSR5 is a high ruggedness N-Channel Enhancement-Mode Lateral MOSFET designed for industrial, broadcast, aerospace, and land mobile applications. It operates across a wide frequency range of 1.8 to 600 MHz with a maximum drain-source voltage of 130 Vdc. The device delivers 300 Watts CW output power at 50 Vdc and 230 MHz. It features integrated ESD protection and can handle load mismatches up to 65:1 VSWR.

Feature Summary

• High ruggedness design capable of handling extreme load mismatches
• Broadband operation spanning from 1.8 to 600 MHz
• Integrated electrostatic discharge (ESD) protection

Applications

• Industrial laser and plasma exciters
• Analog and digital broadcast transmitters
• Aerospace communication systems
• Radio and land mobile equipment

Procurement Notes

Verify the specific suffix 'HSR5' against official documentation to confirm the NI-780S-4 package configuration and tape and reel specifications. Ensure compatibility with existing thermal management designs, as junction temperature limits are critical for maintaining reliability under continuous wave operation conditions.

Selection Notes

Select this component for applications requiring high power density and broadband coverage without retuning. Evaluate thermal resistance requirements carefully, as the device dissipates significant heat during CW operation. Consider push-pull configurations to optimize impedance matching and improve linearity performance in linear amplifier stages.

Part Context

This part belongs to the MRFE6VP6300H series of lateral RF power MOSFETs. It shares core electrical characteristics with variants like the MRFE6VP6300HR3 but differs in packaging and delivery format. The series is engineered for robust performance in demanding RF environments where standard devices might fail due to high standing wave ratios.

Replacement Considerations

MRFE6VP6300HR3