MRFE6VP6600GNR3

MRFE6VP6600GNR3

$78.53
  • Description:RF MOSFET LDMOS 50V OM780G-4
  • Series:-

SKU:7f23ab6f42e3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V OM780G-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:230MHz
  • Gain:24.7dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:600W
  • Voltage - Rated:133 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:OM-780G-4L
  • Supplier Device Package:OM-780G-4L
  • Configuration:Dual

Download product information

MRFE6VP6600GNR3

Overview

The MRFE6VP6600GNR3 is a lateral N-channel RF power MOSFET from the MRFE6VP8600H series, manufactured by NXP Semiconductors. It operates within a frequency range of 470 MHz to 860 MHz and delivers an output power of 600 W. The device features a drain-source breakdown voltage (Vds) of 140 V and a continuous drain current (Id) of 20 A. Key electrical parameters include a gain of 18.8 dB, a maximum forward transconductance of 15.6 S, and a power dissipation capability of 1.52 kW. It utilizes an NI-1230 surface-mount package and supports a maximum operating temperature of +150°C.

Feature Summary

  • High-power RF performance with 600 W output capability in the 470–860 MHz band
  • Robust lateral N-channel silicon construction for high reliability
  • Surface-mount NI-1230 package design optimized for thermal management

Applications

  • Broadband RF power amplification
  • Base station transmitter modules
  • Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify component authenticity through authorized NXP channels or certified distributors. Confirm RoHS compliance status via official documentation. Check for End-of-Life notices as availability may be restricted. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 470–860 MHz spectrum. Evaluate thermal resistance and heat sink compatibility due to 1.52 kW dissipation. Compare against lower-power variants like the MRFE6VP6300H if reduced output is sufficient. Ensure gate drive voltage aligns with the specified threshold characteristics.

Part Context

This part belongs to the MRFE6VP8600H family of broadband RF power MOSFETs. It shares architectural similarities with other devices in the series but is distinguished by its specific power rating and frequency coverage. The NI-1230 package is standard for this class of high-power RF transistors, facilitating integration into compact amplifier designs.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public data. Consider the MRFE6VP6600G (non-R3 suffix) for identical specifications with different packaging. Verify pinout and thermal pad alignment when evaluating alternative packages.

MRFE6VP6600GNR3MRFE6VP6600GNR3
$78.53
Buy Now