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The MRFE6VP6600GNR3 is a lateral N-channel RF power MOSFET from the MRFE6VP8600H series, manufactured by NXP Semiconductors. It operates within a frequency range of 470 MHz to 860 MHz and delivers an output power of 600 W. The device features a drain-source breakdown voltage (Vds) of 140 V and a continuous drain current (Id) of 20 A. Key electrical parameters include a gain of 18.8 dB, a maximum forward transconductance of 15.6 S, and a power dissipation capability of 1.52 kW. It utilizes an NI-1230 surface-mount package and supports a maximum operating temperature of +150°C.
Verify component authenticity through authorized NXP channels or certified distributors. Confirm RoHS compliance status via official documentation. Check for End-of-Life notices as availability may be restricted. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering.
Select this component for applications requiring high linearity and efficiency in the 470–860 MHz spectrum. Evaluate thermal resistance and heat sink compatibility due to 1.52 kW dissipation. Compare against lower-power variants like the MRFE6VP6300H if reduced output is sufficient. Ensure gate drive voltage aligns with the specified threshold characteristics.
This part belongs to the MRFE6VP8600H family of broadband RF power MOSFETs. It shares architectural similarities with other devices in the series but is distinguished by its specific power rating and frequency coverage. The NI-1230 package is standard for this class of high-power RF transistors, facilitating integration into compact amplifier designs.
Direct substitutes are not explicitly confirmed in public data. Consider the MRFE6VP6600G (non-R3 suffix) for identical specifications with different packaging. Verify pinout and thermal pad alignment when evaluating alternative packages.