MRFE6VP6600NR3

Overview

The MRFE6VP6600NR3 is a lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates within the 1.8 to 600 MHz frequency band and delivers an output power of 600 W. The device utilizes silicon technology and is housed in the NI-1230 package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 140 V, a continuous drain current (Id) of 20 A, and a maximum junction temperature of +150 °C. The typical gain is 18.8 dB with a forward transconductance minimum of 15.6 S.

Feature Summary

• Lateral N-channel silicon construction for high-power RF applications
• Broadband operation capability across the 1.8 to 600 MHz spectrum
• Designed for robust performance in wireless infrastructure environments

Applications

• Wireless infrastructure base stations
• Industrial, scientific, and medical (ISM) equipment
• Broadcast transmission systems

Procurement Notes

Verify component authenticity through authorized NXP channels or certified distributors. Confirm that the specific ordering suffix matches the required reel packaging configuration. Ensure compliance with RoHS directives and check for any product lifecycle status updates prior to final procurement decisions.

Selection Notes

Select this component when designing amplifiers requiring 600 W output power within the 1.8 to 600 MHz range. Evaluate thermal management requirements based on the specified power dissipation and junction temperature limits. Ensure the circuit design accommodates the 140 V breakdown voltage and 20 A current capabilities for reliable operation.

Part Context

This part belongs to the MRFE6VP series of RF power LDMOS transistors from NXP Semiconductors. The series targets high-efficiency power amplification for cellular infrastructure and broadcast markets. The NI-1230 package provides a standardized form factor for mounting in high-power radio units.

Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Cross-reference specifications such as frequency range, output power, and package dimensions before considering alternatives.