SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MRFE6VP8600HR6 is a lateral N-channel broadband RF power MOSFET manufactured by NXP Semiconductors. It operates within the 470 MHz to 860 MHz frequency range and delivers 600 W of continuous wave output power at 50 V drain bias. The device utilizes an NI-1230H surface-mount package designed for high thermal efficiency. Key electrical characteristics include a maximum operating temperature of +150°C, a continuous drain current of 20 A, and a drain-source breakdown voltage of 140 V.
Verify component authenticity through authorized NXP channels due to potential obsolescence risks. Confirm specific reel packaging requirements as availability may vary. Ensure supply chain partners provide valid traceability documentation. Check for end-of-life notices or alternative sourcing options before finalizing procurement plans.
Select this component for applications requiring wide bandwidth coverage without retuning. Evaluate thermal management solutions to maintain junction temperatures within specified limits during high-power operation. Consider the NI-1230H package dimensions for PCB layout compatibility. Verify that the 50 V bias requirement aligns with existing power supply architectures.
This part belongs to the MRFE6VP series of lateral DMOS transistors designed for demanding RF power applications. The series emphasizes broad frequency coverage and high reliability in harsh environments. The HR6 suffix typically denotes specific reel packaging configurations within the broader product family.
Publicly confirmed substitute part numbers are not available in the provided data. Consult NXP technical support for validated alternatives if this component becomes unavailable.