MRFE6VP8600HR6

MRFE6VP8600HR6

  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-

SKU:55d0e0ec0bed Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:860MHz
  • Gain:19.3dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.4 A
  • Power - Output:125W
  • Voltage - Rated:130 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-1230
  • Supplier Device Package:NI-1230
  • Configuration:Dual

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MRFE6VP8600HR6

Overview

The MRFE6VP8600HR6 is a lateral N-channel broadband RF power MOSFET manufactured by NXP Semiconductors. It operates within the 470 MHz to 860 MHz frequency range and delivers 600 W of continuous wave output power at 50 V drain bias. The device utilizes an NI-1230H surface-mount package designed for high thermal efficiency. Key electrical characteristics include a maximum operating temperature of +150°C, a continuous drain current of 20 A, and a drain-source breakdown voltage of 140 V.

Feature Summary

  • Broadband operation across the 470 MHz to 860 MHz spectrum
  • High power density with 600 W continuous wave capability
  • Robust thermal performance supporting high junction temperatures

Applications

  • Commercial broadcast transmitter systems
  • Industrial heating and plasma generation equipment
  • Military communication infrastructure

Procurement Notes

Verify component authenticity through authorized NXP channels due to potential obsolescence risks. Confirm specific reel packaging requirements as availability may vary. Ensure supply chain partners provide valid traceability documentation. Check for end-of-life notices or alternative sourcing options before finalizing procurement plans.

Selection Notes

Select this component for applications requiring wide bandwidth coverage without retuning. Evaluate thermal management solutions to maintain junction temperatures within specified limits during high-power operation. Consider the NI-1230H package dimensions for PCB layout compatibility. Verify that the 50 V bias requirement aligns with existing power supply architectures.

Part Context

This part belongs to the MRFE6VP series of lateral DMOS transistors designed for demanding RF power applications. The series emphasizes broad frequency coverage and high reliability in harsh environments. The HR6 suffix typically denotes specific reel packaging configurations within the broader product family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult NXP technical support for validated alternatives if this component becomes unavailable.

MRFE6VP8600HR6MRFE6VP8600HR6

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