SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MRFE6VS25GNR1 is a wideband RF power LDMOS transistor from NXP Semiconductors, designed for narrowband and broadband ISM, broadcast, and aerospace applications. Operating within the 1.8 to 2000 MHz frequency range, it delivers 25 W of output power at a 50 V supply voltage. The device features high ruggedness suitable for environments with high VSWRs, utilizing an enhanced platform for reliability. It is housed in a TO-270G-2 plastic package.
Verify the specific ordering suffix 'GN' corresponds to the required lead configuration. The datasheet indicates that the GN suffix denotes parts requiring gull wing lead forming, whereas the NR1 suffix typically refers to reel shipping quantities. Confirm package dimensions and thermal requirements against the target PCB design before finalizing procurement orders.
Select this component for designs requiring high power density across a broad spectrum up to 2 GHz. Ensure the application environment accommodates the specified junction temperature limits and thermal resistance values. Verify that the biasing network supports the required gate-source voltages and quiescent current settings for optimal efficiency and linearity.
This part belongs to NXP's RF Power LDMOS Transistor family, specifically engineered for high ruggedness. It shares the core technology with the MRFE6VS25NR1 but differs in physical packaging and lead style. The series is optimized for robust performance in demanding RF power amplifier architectures.
MRFE6VS25NR1