MRFE6VS25LR5

$86.86

Description：RF MOSFET LDMOS 50V NI360
Series：-

SKU:db46d0e4847c Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V NI360
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：LDMOS
Frequency：512MHz
Gain：25.9dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：10 mA
Power - Output：25W
Voltage - Rated：133 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-360
Supplier Device Package：NI-360
Configuration：-

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MRFE6VS25LR5

Overview

The MRFE6VS25LR5 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for ISM, broadcast, and aerospace applications. It operates from 1.8 to 2000 MHz with a drain-source voltage of 133 Vdc and delivers 25 W output power at 50 Vdc. The device features extreme ruggedness, supporting VSWRs exceeding 65:1 without degradation. It utilizes the NI-360H-2L package and includes integrated stability enhancements and extended ESD protection.

Feature Summary

Extreme ruggedness capable of withstanding high VSWR conditions
Wide operating frequency range covering 1.8 to 2000 MHz
Integrated stability enhancements for reliable operation
Extended electrostatic discharge (ESD) protection circuit

Applications

Industrial, Scientific, and Medical (ISM) equipment
Broadcast transmission systems
Aerospace communication applications

Procurement Notes

Verify the R5 suffix indicates a 50-unit reel quantity on a 32 mm tape width. Confirm the NI-360H-2L package type matches design requirements. Ensure compatibility with the specified thermal management solutions for the junction-to-case resistance values provided in the datasheet.

Selection Notes

Select this component for designs requiring broad bandwidth and high load mismatch tolerance. Consider the 1.4 °C/W thermal resistance for heat sink sizing. Verify gate threshold voltage ranges align with biasing circuits. Evaluate the MTTF calculator data against operational temperature constraints.

Part Context

This part belongs to the MRFE6VS25L family of wideband RF power LDMOS transistors. It shares core electrical characteristics with the MRFE6VS25N variant but differs in packaging and delivery format. The device represents NXP's enhanced ruggedness platform technology for high-power RF amplification.

Replacement Considerations

MRFE6VS25N

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) is rated at -0.5 to +133 Vdc.

How does the device perform under severe load mismatch?

The transistor exhibits extreme ruggedness, showing no device degradation when subjected to VSWRs greater than 65:1 at all phase angles with up to 3 dB overdrive.