MRFE6VS25NR1

$31.23

Description：RF MOSFET LDMOS 50V TO270-2
Series：-

SKU:6a0fbd4daf72 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V TO270-2
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：LDMOS
Frequency：512MHz
Gain：25.4dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：10 mA
Power - Output：25W
Voltage - Rated：133 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-270AA
Supplier Device Package：TO-270-2
Configuration：-

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MRFE6VS25NR1

Overview

The MRFE6VS25NR1 is a wideband RF power LDMOS transistor designed for ISM, broadcast, and aerospace applications. It operates from 1.8 to 2000 MHz with a drain-source voltage of 50 Vdc. The device delivers 25 W output power across its frequency range. Key electrical parameters include a drain-source breakdown voltage of 133 Vdc, a gate threshold voltage of 2.0 Vdc typical, and a maximum junction temperature of +225 °C. It utilizes a TO-270-2 plastic package.

Feature Summary

Enhanced ruggedness platform suitable for high VSWR environments
Wide operating frequency range covering 1.8 to 2000 MHz
Extended ESD protection circuit compliant with multiple standards
Low thermal resistance for efficient heat dissipation

Applications

Narrowband and broadband ISM applications
Broadcast transmitter systems
Aerospace communication equipment

Procurement Notes

Verify the specific ordering suffix R1 indicates shipping in a 500-unit reel with 24 mm tape width. Confirm the package variant matches the required lead configuration, as the GN suffix denotes gull wing leads formed for surface mount installation. Ensure compliance with RoHS and REACH SVHC requirements before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high linearity and ruggedness in wideband amplifiers. The device supports both narrowband and broadband topologies. Consider the thermal management requirements given the junction-to-case thermal resistance. Verify that the system can handle the specified gate-source voltage limits and moisture sensitivity level during assembly.

Part Context

This part belongs to NXP’s enhanced ruggedness platform of RF power LDMOS transistors. It is an N-channel enhancement-mode lateral MOSFET. The MRFE6VS25GNR1 is the gull-wing leaded variant of this device. Both versions share identical electrical characteristics and are intended for demanding RF power amplifier applications.