MRFE8VP8600HSR5

Overview

The MRFE8VP8600HSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for UHF TV broadcast applications. It operates within the 470–860 MHz frequency range with a 140 W average output power at 50 V DC. The device features an integrated input matching network and unmatched output, supporting DVB-T Class AB performance. Key electrical parameters include a drain-source breakdown voltage of 115 Vdc, a gate-source voltage range of -6 to +10 Vdc, and a thermal resistance junction-to-case of 0.16 °C/W.

Feature Summary

• Integrated input matching network for improved power distribution
• Unmatched output configuration for flexible design
• Extended negative gate-source voltage range from –6 Vdc to +10 Vdc
• High gain and efficiency suitable for Class AB and Doherty operations

Applications

• UHF TV broadcast transmitters
• Analog TV transmitter systems
• Digital TV (DVB-T) transmitter systems

Procurement Notes

Verify the specific ordering suffix R5 against official documentation to confirm tape and reel specifications. Confirm package type NI-1230S-4S matches the required form factor. Ensure compatibility with existing thermal management solutions given the high power dissipation requirements. Validate that the component status aligns with long-term supply needs.

Selection Notes

Select this transistor for designs requiring high linearity in UHF broadcast bands. The integrated input matching simplifies circuit layout compared to unmatched devices. Consider the thermal resistance of 0.16 °C/W when designing heat sinks. Verify that the operating junction temperature remains within the specified -40 to +225 °C range for reliability.

Part Context

This component belongs to the RF Power LDMOS Transistor family from NXP Semiconductors. It is specifically engineered for high-power broadcast applications where wide bandwidth and linear performance are critical. The device complements other UHF transistors in the portfolio by offering a balance of gain, efficiency, and ruggedness for demanding transmission environments.

Replacement Considerations

Consult official substitution lists for equivalent NXP LDMOS transistors. Verify pinout compatibility and thermal characteristics before replacing. Ensure any substitute part meets the same frequency and power specifications for UHF broadcast use.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) is rated at -0.5 to +115 Vdc.

Does the device include internal matching networks?

Yes, the MRFE8VP8600HS includes an integrated input matching network but has an unmatched output.

What is the recommended quiescent current for DVB-T operation?

The typical functional test condition specifies a quiescent current (IDQ) of 1400 mA.