MRFG35002N6T1

Overview

The MRFG35002N6T1 is a Gallium Arsenide pHEMT RF Power Field Effect Transistor manufactured by Freescale Semiconductor. Designed for wireless local loop, multimedia messaging data service, and broadband wireless access applications, it operates within the 500 to 5000 MHz frequency range. The device delivers 2 Watts of output power at P1dB when operating at 3550 MHz. It is engineered for unmatched integration in Class AB Customer Premise Equipment configurations.

Feature Summary

• High gain, efficiency, and linearity characteristics
• Excellent phase linearity and group delay performance
• RoHS compliant construction

Applications

• WLL driver stages
• MMDS driver stages
• BWA driver stages
• UMTS driver applications
• Class AB CPE amplifiers

Procurement Notes

Verify the specific suffix against the manufacturer's current documentation to confirm packaging details and compliance status. Ensure the component matches the exact part number required for your design specifications. Cross-reference with official NXP or Freescale datasheets to validate electrical parameters before procurement.

Selection Notes

Select this component for designs requiring high linearity and power density in the UHF to S-band spectrum. It is suitable for applications demanding unmatched transistor performance without external matching networks. Consider its suitability for Class AB operation in customer premise equipment where size and efficiency are critical constraints.

Part Context

This device belongs to the MRFG3500x series of Gallium Arsenide pHEMT transistors. It shares architectural similarities with parts like the MRFG35003N6AT1 but offers distinct power output levels tailored for specific driver requirements. The series is optimized for cost-effective integration in wireless communication infrastructure.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.