MRFG35003N6T1

MRFG35003N6T1

$10.90
  • Description:RF MOSFET PHEMT FET 6V PLD-1.5
  • Series:-

SKU:1c4442465982 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 6V PLD-1.5
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:pHEMT FET
  • Frequency:3.55GHz
  • Gain:9dB
  • Voltage - Test:6 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:180 mA
  • Power - Output:3W
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PLD-1.5
  • Supplier Device Package:PLD-1.5
  • Configuration:-

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MRFG35003N6T1

Overview

The MRFG35003N6T1 is a Gallium Arsenide pHEMT RF Power Field Effect Transistor manufactured by Freescale Semiconductor. Designed for wireless local loop, MMDS, BWA, and UMTS driver applications, it operates within a frequency range of 500 to 5000 MHz. The device delivers 3 Watts of output power at P1dB when operating at 3550 MHz under continuous wave conditions. It is engineered for unmatched integration in Class AB Customer Premise Equipment configurations.

Feature Summary

  • Provides excellent phase linearity and group delay characteristics suitable for complex modulation schemes
  • Delivers high gain, high efficiency, and high linearity performance in RF power amplification
  • Optimized for single-carrier W-CDMA operation with superior ACPR performance

Applications

  • Wireless Local Loop (WLL) driver stages
  • Multichannel Multipoint Distribution Service (MMDS) systems
  • Broadband Wireless Access (BWA) infrastructure
  • UMTS driver applications

Procurement Notes

Verify the specific suffix designation against the manufacturer's current documentation to confirm packaging details. The T1 suffix indicates tape and reel configuration with 1000 units per 12 mm, 7 inch reel. Ensure compatibility with RoHS compliance requirements as specified in the technical data document Rev. 2.

Selection Notes

Select this component for designs requiring unmatched GaAs pHEMT technology in the 500 to 5000 MHz band. It is specifically suited for Class AB operation in customer premise equipment where high linearity and efficiency are critical. Consider the 6 Volt drain voltage requirement and 180 mA quiescent current for bias network design.

Part Context

This transistor belongs to the MRFG3500 series of Gallium Arsenide pHEMT devices from Freescale Semiconductor. These components are part of a reference library designed to simplify the development of RF power amplifier stages for various wireless communication standards without requiring external matching networks.

Replacement Considerations

The MRFG35003M6T1 is listed as a similar Gallium Arsenide PHEMT device by Motorola and Freescale. Verify pinout and electrical specifications before substitution.

MRFG35003N6T1MRFG35003N6T1
$10.90
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