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Product Detailed Parameters
- Description：RF MOSFET PHEMT FET 12V PLD-1.5
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：pHEMT FET
- Frequency：3.55GHz
- Gain：10dB
- Voltage - Test：12 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：130 mA
- Power - Output：9W
- Voltage - Rated：15 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：PLD-1.5
- Supplier Device Package：PLD-1.5
- Configuration：-
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Overview
The MRFG35010ANT1 is a Gallium Arsenide pHEMT RF power field-effect transistor designed for broadband applications from 500 to 5000 MHz. It operates at a drain-source voltage of 12 Vdc and delivers a 9 W P1dB output power at 3550 MHz. The device features high efficiency and linearity, characterized by an adjacent channel power ratio of -43 dBc in single-carrier W-CDMA configurations. It utilizes a PLD-1.5 plastic package and is supplied in tape and reel format.
Feature Summary
- Broadband operation across the 500 to 5000 MHz frequency range
- High power gain and excellent phase linearity characteristics
- Suitable for unmatched Class AB driver applications
Applications
- Wireless Local Loop (WLL) driver stages
- Multimedia Messaging Data Service (MMDS) amplifiers
- Broadband Wireless Access (BWA) systems
- UMTS driver applications
Procurement Notes
Verify the component against the official Freescale Semiconductor datasheet document number MRFG35010AN, revision 4, dated August 2013. Confirm that the ordering suffix T1 corresponds to the specified tape and reel packaging configuration with a 16 mm tape width and 13-inch reel size. Ensure compatibility with the PLD-1.5 plastic package dimensions and thermal requirements before procurement.
Selection Notes
Select this device for designs requiring a 12 Vdc supply rail and high linearity in broadband RF power amplifier stages. The GaAs pHEMT technology supports unmatched topologies suitable for customer premise equipment. Evaluate thermal management capabilities based on the junction-to-case thermal resistance rating to ensure reliable operation within the specified temperature limits.
Part Context
This component belongs to the family of Gallium Arsenide pHEMT RF power transistors manufactured by Freescale Semiconductor. It is engineered specifically for broadband wireless communication infrastructure and access networks. The device provides a balance of high output power and linearity required for modern digital modulation schemes.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) rating is 15 Vdc.
How is the device packaged and supplied?
The device is housed in a PLD-1.5 plastic package and is supplied in tape and reel format.
What is the typical adjacent channel power ratio performance?
In single-carrier W-CDMA tests at 3550 MHz, the typical ACPR is -43 dBc.
