MRFG35010R1

MRFG35010R1

$41.29
  • Description:RF MOSFET PHEMT FET 12V NI360
  • Series:-

SKU:24fbe753a6dd Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 12V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:pHEMT FET
  • Frequency:3.55GHz
  • Gain:10dB
  • Voltage - Test:12 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:180 mA
  • Power - Output:10W
  • Voltage - Rated:15 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-360HF
  • Supplier Device Package:NI-360HF
  • Configuration:-

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MRFG35010R1

Overview

The MRFG35010R1 is a Gallium Arsenide PHEMT RF Power Field Effect Transistor designed for WLL, MMDS, or UMTS driver applications across frequencies from 1800 to 3600 MHz. It operates with a drain-source voltage of 15 Vdc and delivers an output power of 1 Watt at 3.55 GHz with 12 Volts supply. The device provides a power gain of 10 dB and achieves 30% efficiency under typical W-CDMA conditions. It features excellent phase linearity and group delay characteristics suitable for Class AB or Class A linear base station configurations.

Feature Summary

  • Designed for wideband applications requiring high linearity and efficiency in linear base station environments
  • Features excellent phase linearity and group delay characteristics for accurate signal amplification
  • Suitable for use in Class AB or Class A linear amplifier topologies

Applications

  • WLL (Wireless Local Loop) driver stages
  • MMDS (Multichannel Multipoint Distribution Service) driver stages
  • UMTS (Universal Mobile Telecommunications System) driver applications

Procurement Notes

Verify the specific ordering suffix R1 confirms the tape and reel packaging configuration containing 500 units per 32 mm, 13 inch reel. Confirm that the component is sourced as archive information, as it has been replaced by the MRFG35010AR1 variant. Ensure compatibility with existing system designs before procurement due to its discontinued status.

Selection Notes

Select this component for applications requiring a GaAs PHEMT transistor operating between 1800 and 3600 MHz. It is appropriate for systems needing 1 Watt output power with 10 dB gain at 3.55 GHz. Consider the 15 Vdc maximum drain-source voltage and the requirement for external matching networks as the device is unmatched.

Part Context

This part belongs to the Freescale Semiconductor (now NXP USA Inc.) RF Device Data portfolio. It is a Gallium Arsenide PHEMT technology device housed in the CASE 360D-02 package. The datasheet revision history indicates it was archived in January 2008 following the introduction of replacement parts.

Replacement Considerations

The MRFG35010R1 has been replaced by the MRFG35010AR1.

FAQ

Is the MRFG35010R1 internally matched?

No, the device is unmatched and requires external input and output matching networks.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) is rated at 15 Vdc.

What packaging format does the R1 suffix indicate?

The R1 suffix indicates the device is supplied in tape and reel format, with 500 units per 32 mm, 13 inch reel.

MRFG35010R1MRFG35010R1
$41.29
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