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The MRFG35010R1 is a Gallium Arsenide PHEMT RF Power Field Effect Transistor designed for WLL, MMDS, or UMTS driver applications across frequencies from 1800 to 3600 MHz. It operates with a drain-source voltage of 15 Vdc and delivers an output power of 1 Watt at 3.55 GHz with 12 Volts supply. The device provides a power gain of 10 dB and achieves 30% efficiency under typical W-CDMA conditions. It features excellent phase linearity and group delay characteristics suitable for Class AB or Class A linear base station configurations.
Verify the specific ordering suffix R1 confirms the tape and reel packaging configuration containing 500 units per 32 mm, 13 inch reel. Confirm that the component is sourced as archive information, as it has been replaced by the MRFG35010AR1 variant. Ensure compatibility with existing system designs before procurement due to its discontinued status.
Select this component for applications requiring a GaAs PHEMT transistor operating between 1800 and 3600 MHz. It is appropriate for systems needing 1 Watt output power with 10 dB gain at 3.55 GHz. Consider the 15 Vdc maximum drain-source voltage and the requirement for external matching networks as the device is unmatched.
This part belongs to the Freescale Semiconductor (now NXP USA Inc.) RF Device Data portfolio. It is a Gallium Arsenide PHEMT technology device housed in the CASE 360D-02 package. The datasheet revision history indicates it was archived in January 2008 following the introduction of replacement parts.
The MRFG35010R1 has been replaced by the MRFG35010AR1.
No, the device is unmatched and requires external input and output matching networks.
The maximum drain-source voltage (VDSS) is rated at 15 Vdc.
The R1 suffix indicates the device is supplied in tape and reel format, with 500 units per 32 mm, 13 inch reel.