MRFG35030R5

Overview

The MRFG35030R5 is a radio frequency power field-effect transistor manufactured by NXP USA Inc. It utilizes pHEMT technology and operates at a test voltage of 12V. The device delivers an output power of 3W with a gain of 12dB. Its operational frequency range extends up to 3.55GHz, and it features a drain current rating of 650mA. The component is supplied in reel packaging.

Feature Summary

• Utilizes pHEMT technology for RF power applications
• Designed for stable operation in embedded communication systems

Applications

• RF power amplification
• Embedded communication applications

Procurement Notes

Verify the specific manufacturer datasheet for the MRFG35030R5 to confirm current availability status and lead times. Ensure that the ordering suffix matches the required reel configuration. Cross-reference the part number with official NXP documentation to validate technical specifications against your design requirements before finalizing procurement.

Selection Notes

Select this component when a 12V supply and 3W output power are required for RF applications. Consider the 3.55GHz frequency limit and 12dB gain characteristics. Evaluate the pHEMT technology benefits for your specific circuit topology. Confirm compatibility with existing software tools and integration requirements for the target system.

Part Context

This part belongs to the family of RF FETs and MOSFETs from NXP USA Inc. It is designed specifically for high-frequency power amplification tasks. The device supports rapid prototyping and evaluation in RF engineering contexts. It serves as a key component for developers working on wireless communication hardware requiring reliable RF performance.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.