MRFX1K80HR5

Overview

The MRFX1K80HR5 is an NXP Semiconductors RF Power LDMOS Transistor designed for high ruggedness applications. It operates within a frequency range of 1.8 to 400 MHz and supports up to 1800 W continuous wave output at 65 V drain-source voltage. The device features unmatched input and output designs, allowing wide frequency utilization in single-ended or push-pull configurations. Qualified for maximum 65 V operation, it includes integrated ESD protection and is supplied in the NI-1230H-4S package with an R5 suffix indicating 50 units per 56 mm tape on a 13-inch reel.

Feature Summary

• Unmatched input and output design supporting wide frequency range utilization from 1.8 to 400 MHz
• Integrated ESD protection with extended negative gate-source voltage range for improved Class C operation
• High breakdown voltage ensuring enhanced reliability under harsh conditions
• Suitable for linear applications with appropriate biasing in industrial, medical, and broadcast sectors

Applications

• Industrial, scientific, and medical (ISM) systems including laser and plasma generation
• Radio and VHF TV broadcast transmitters
• Aerospace HF communications and radar systems

Procurement Notes

Verify the R5 ordering suffix confirms the specific packaging configuration of 50 units on a 56 mm tape width within a 13-inch reel. Ensure compatibility with the NI-1230H-4S air cavity ceramic package dimensions and thermal requirements. Confirm that the application environment respects the maximum ratings for drain-source voltage and junction temperature to maintain device longevity and performance standards.

Selection Notes

Select this component for designs requiring high power density and broad bandwidth without internal matching networks. The 65 V rating allows for higher output impedance compared to 50 V devices, simplifying broadband matching. Consider the thermal resistance characteristics when designing heatsinking solutions. Verify pin-to-pin compatibility if replacing older 50 V LDMOS variants to facilitate PCB design reuse.

Part Context

This part belongs to the MRFX series of 65 V LDMOS transistors from NXP Semiconductors. The series utilizes advanced lateral diffusion metal oxide semiconductor technology to deliver high output power while maintaining reasonable output impedance. The MRFX1K80H variant specifically targets wideband applications, offering robust performance across multiple frequency bands suitable for demanding RF power amplifier architectures.

Replacement Considerations

The over-molded plastic package version MRFX1K80N offers lower thermal resistance but requires verification of mechanical fit. Previous generation 50 V LDMOS transistors may serve as functional substitutes if board layout permits, though impedance matching will differ significantly due to voltage scaling.