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The MRFX1K80NR5 is a high ruggedness N-channel enhancement-mode LDMOS transistor designed for wideband RF power applications. It operates from 1.8 to 400 MHz with a maximum drain-source voltage of 65 Vdc and breakdown voltage up to 193 Vdc. The device delivers 1800 W CW output at 98 MHz or 1800 W peak pulse output at 230 MHz. It features low thermal resistance, integrated ESD protection, and pin-to-pin compatibility with previous generations.
Verify the R5 suffix indicates a 50-unit tape and reel configuration on a 56 mm width 13-inch reel. Confirm the OM-1230-4L plastic package designation matches your assembly requirements. Ensure compliance with Moisture Sensitivity Level 3 standards during storage and handling procedures.
Select this component for designs requiring 1800 W output across broad frequency bands. The 65 V rating allows higher output impedance simplifying matching networks. Verify thermal management capabilities align with the specified junction-to-case thermal resistance values for continuous wave operation.
This part belongs to the MRFX series of 65 V LDMOS transistors. It serves as a plastic packaged alternative to ceramic variants like the MRFX1K80H. The series targets industrial and broadcast markets needing high power density and ruggedness in a cost-effective over-molded solution.
The MRFX1K80GNR5 is a pin-compatible variant within the same family. Both share identical electrical characteristics and package dimensions. Verify specific ordering suffixes match your required packaging format before substitution.