MRFX1K80NR5

MRFX1K80NR5

$179.57
  • Description:RF MOSFET LDMOS 65V OM1230-4
  • Series:-

SKU:a3e143b1d0b2 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 65V OM1230-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.8MHz ~ 470MHz
  • Gain:24dB
  • Voltage - Test:65 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:1800W
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:OM-1230-4L
  • Supplier Device Package:OM-1230-4L
  • Configuration:-

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MRFX1K80NR5

Overview

The MRFX1K80NR5 is a high ruggedness N-channel enhancement-mode LDMOS transistor designed for wideband RF power applications. It operates from 1.8 to 400 MHz with a maximum drain-source voltage of 65 Vdc and breakdown voltage up to 193 Vdc. The device delivers 1800 W CW output at 98 MHz or 1800 W peak pulse output at 230 MHz. It features low thermal resistance, integrated ESD protection, and pin-to-pin compatibility with previous generations.

Feature Summary

  • Unmatched input and output design supporting wide frequency range utilization
  • High breakdown voltage ensuring enhanced reliability under mismatched load conditions
  • Integrated ESD protection with extended negative gate-source voltage range
  • Lower thermal resistance plastic package suitable for linear applications

Applications

  • Industrial, scientific, and medical (ISM) systems including laser and plasma generation
  • Radio and VHF TV broadcast transmitters
  • Aerospace HF communications and radar systems
  • Mobile radio infrastructure requiring high VSWR tolerance

Procurement Notes

Verify the R5 suffix indicates a 50-unit tape and reel configuration on a 56 mm width 13-inch reel. Confirm the OM-1230-4L plastic package designation matches your assembly requirements. Ensure compliance with Moisture Sensitivity Level 3 standards during storage and handling procedures.

Selection Notes

Select this component for designs requiring 1800 W output across broad frequency bands. The 65 V rating allows higher output impedance simplifying matching networks. Verify thermal management capabilities align with the specified junction-to-case thermal resistance values for continuous wave operation.

Part Context

This part belongs to the MRFX series of 65 V LDMOS transistors. It serves as a plastic packaged alternative to ceramic variants like the MRFX1K80H. The series targets industrial and broadcast markets needing high power density and ruggedness in a cost-effective over-molded solution.

Replacement Considerations

The MRFX1K80GNR5 is a pin-compatible variant within the same family. Both share identical electrical characteristics and package dimensions. Verify specific ordering suffixes match your required packaging format before substitution.

MRFX1K80NR5MRFX1K80NR5
$179.57
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