MRFX600HSR5

Overview

The MRFX600HSR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET from the MRFX600H series, designed for wideband RF power applications. It operates within a frequency range of 1.8 to 400 MHz and delivers up to 600 W continuous wave output at 65 V drain-source voltage. The device features a NI-780S-4L package with screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 179 Vdc, forward transconductance of 33.6 S, and total device dissipation of 1333 W at 25°C case temperature.

Feature Summary

• Unmatched input and output impedance design supporting wide frequency utilization
• High ruggedness qualified for extreme load mismatch conditions exceeding 65:1 VSWR
• Integrated electrostatic discharge protection suitable for linear Class C operation
• Included in product longevity program ensuring supply assurance

Applications

• Industrial, scientific, and medical equipment such as plasma generation and laser systems
• Radio and VHF TV broadcast transmission
• Aerospace HF communications and radar systems
• Mobile radio PMR base stations and HF/VHF communications

Procurement Notes

Verify the specific ordering suffix R5 corresponds to the required reel packaging configuration of 50 units on a 13-inch reel with 32 mm tape width. Confirm that the NI-780S-4L package variant matches the mechanical constraints of the target assembly. Ensure compliance with RoHS directives and check for any regional distribution restrictions prior to finalizing procurement orders.

Selection Notes

Select this component when designing amplifiers requiring high power density across broad frequency bands from 1.8 to 400 MHz. The device supports both single-ended and push-pull configurations, offering flexibility in circuit topology. Consider the thermal resistance characteristics and the need for robust heat sinking given the high power dissipation capabilities. Verify that the system can accommodate the specific gate threshold voltage requirements for optimal biasing.

Part Context

This transistor belongs to the MRFX600H family of high-power LDMOS devices manufactured by NXP Semiconductors. The series is engineered for demanding RF environments where reliability under high voltage stress is critical. The HS designation indicates a specific package style optimized for screw mounting, distinguishing it from other variants in the same performance class.

Replacement Considerations

Direct substitutes within the same family include the MRFX600HR5 and MRFX600GSR5. These alternatives share identical electrical specifications but differ in package type and reel packaging dimensions. Evaluate mechanical fit and mounting requirements before substituting.