MS2321

Overview

The MS2321 is a gold metallized silicon NPN power transistor designed for pulsed RF applications. It features an M105 package and supports operation up to 1.15 GHz with a collector-emitter voltage rating of 65V. The component utilizes fundamental or third overtone crystal stabilization for low jitter performance in square wave generation contexts, though it functions primarily as a discrete semiconductor device.

Feature Summary

• Gold metallized silicon construction
• NPN power transistor configuration
• Optimized for pulsed RF applications

Applications

• Pulsed RF systems
• High-frequency signal generation
• RF power amplification stages

Procurement Notes

Verify the manufacturer designation carefully, as Microsemi Corporation is now part of Microchip Technology Inc. Ensure the specific M105 package variant matches the design requirements. Confirm that the 65V rating and 1.15 GHz frequency limit align with the target circuit's electrical constraints before finalizing procurement.

Selection Notes

Select this component when a gold-metallized NPN transistor is required for high-frequency pulsed operations. The M105 package provides specific mechanical and thermal characteristics suitable for RF environments. Evaluate the 65V breakdown voltage against peak transient loads to ensure reliable operation within the specified frequency range.

Part Context

This discrete semiconductor belongs to the broader category of RF transistors used in communication and signal processing hardware. It complements integrated oscillators by providing discrete power handling capabilities. The product line focuses on high-performance components for demanding electronic systems requiring precise frequency control and robust power delivery.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.