MSC025SMA120D/S

Description：MOSFET SIC 1200 V 25 MOHM DIE
Series：-
Mfr：Microchip Technology
Package：Bulk

SKU:82fbd7d9227a Category: Single FETs, MOSFETs Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MSC025SMA120D/S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET SIC 1200 V 25 MOHM DIE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MSC025SMA120D/S

Description：MOSFET SIC 1200 V 25 MOHM DIE
Series：-
Mfr：Microchip Technology
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for MSC025SMA120D/S

MSC025SMA120D/S

Single FETs, MOSFETs Overview

The MSC025SMA120D/S is a silicon carbide (SiC) MOSFET manufactured by Microchip Technology. It features an N-channel enhancement mode configuration with a drain-source breakdown voltage of 1200 V and a maximum on-resistance of 30 mΩ. The device supports gate-source voltages ranging from -10 V to +23 V, with a typical threshold voltage of 3 V. Key electrical characteristics include a gate charge of 232 nC. It operates within a temperature range of -55°C to +175°C and is supplied in a bare die format.

Single FETs, MOSFETs Feature Summary

Utilizes silicon carbide semiconductor technology for high-temperature operation up to 175°C
Features an N-channel enhancement mode structure optimized for low conduction losses
Designed as a bare die component for integration into custom power modules

Single FETs, MOSFETs Applications

High-efficiency power conversion systems
Industrial motor drives
Uninterruptible power supplies (UPS)
Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm package type and availability status. As a specialized semiconductor component, ensure that ordering requirements and factory special order protocols are confirmed directly with the manufacturer or authorized distributors prior to procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability and low on-resistance in a compact form factor. Consider the bare die format when designing custom power assemblies where thermal management and mounting infrastructure are handled externally. Ensure gate drive circuits accommodate the specified voltage limits and charge requirements.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's silicon carbide MOSFET portfolio, designed to replace traditional silicon devices in high-power applications. The 'D' suffix typically indicates a tape and reel packaging format for the die, distinguishing it from module or leaded variants within the same electrical specification family.