MSCMC120AM07CT6LIAG

FET, MOSFET Arrays Overview

The MSCMC120AM07CT6LIAG is a discrete semiconductor module from Microchip Technology, classified under MOSFET-SiC SBD Modules. It utilizes Silicon Carbide (SiC) technology and features an N-Channel configuration. The device is housed in the SP6C LI package with a base mount installation style. Key electrical parameters include a drain-source breakdown voltage of 1200V and a continuous drain current of 742A at case temperature. The on-resistance is specified as 2.85 milliohms at 600A and 20V gate-source voltage. The module supports a maximum power dissipation of 3200W at case temperature and operates within a junction temperature range of -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Integrates Silicon Carbide MOSFET and Schottky Barrier Diode for high-efficiency power conversion
• Designed for base mount installation to facilitate thermal management in high-power applications
• Features low on-resistance characteristics optimized for high-current operation

FET, MOSFET Arrays Applications

• Industrial motor drives
• Uninterruptible power supplies
• High-frequency switching power converters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix and package variant against the official Microchip datasheet to ensure compatibility with your thermal interface and mounting requirements. Confirm that the SP6C LI package dimensions match your mechanical design constraints. Cross-reference the electrical ratings with your system's peak load conditions to prevent overstress. Ensure that the sourcing channel provides authentic components with traceable documentation.

FET, MOSFET Arrays Selection Notes

Select this component when high voltage blocking capability and high current handling are required in a compact form factor. The SiC technology offers advantages in high-temperature environments compared to traditional silicon devices. Consider the thermal resistance and mounting method when designing the heat sink interface. Evaluate the gate charge and switching speeds if high-frequency operation is a primary design goal.

FET, MOSFET Arrays Part Context

This part belongs to the MSCMC120 series of discrete semiconductor modules from Microchip Technology. It is designed for robust performance in demanding power electronics applications. The series leverages Silicon Carbide technology to achieve superior efficiency and thermal stability. It serves as a critical component in systems requiring reliable high-power switching capabilities.

FET, MOSFET Arrays Replacement Considerations

Consult the official Microchip replacement guide or datasheet errata for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' packages without verifying pinout and thermal specifications.