MSCSM120AM02CT6LIAG

FET, MOSFET Arrays Overview

The MSCSM120AM02CT6LIAG is a silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a two-element N-channel configuration housed in an SP6C LI package designed for screw mounting. The device supports a drain-source voltage of 1200V and delivers a continuous drain current of 742A at case temperature. Key electrical parameters include a maximum on-resistance of 2.85 milliohms at 600A and 20V gate drive, with a maximum gate charge of 1932nC at 20V. The module operates within a junction temperature range of -40°C to 175°C and handles a maximum power dissipation of 3200W.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide technology for high-temperature stability and low switching losses
• Integrates a phase-leg configuration with built-in SiC Schottky barrier diodes
• Features the SP6C LI low-inductance package design for efficient thermal management
• Supports high-voltage operation suitable for demanding power conversion applications

FET, MOSFET Arrays Applications

• High-power industrial motor drives
• Uninterruptible power supply systems
• Solar photovoltaic inverters
• Battery charging equipment

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix LIAG against official Microchip documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the ordering information matches the exact part number required for your system design. Cross-reference datasheet revisions to confirm any updates to mechanical dimensions or electrical characteristics before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when designing systems requiring high current density and robust performance at elevated temperatures. The SP6C LI package offers a compact form factor with optimized thermal resistance. Consider the 1200V rating and 742A current capability to ensure adequate headroom for peak load conditions and transient events in your specific power electronics application.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip SiC MOSFET discrete semiconductor family, specifically utilizing the SP6C LI package architecture. It represents an evolution in silicon carbide power devices aimed at replacing traditional silicon IGBTs in high-efficiency applications. The product line emphasizes reduced system size and weight through higher switching frequencies and improved thermal performance.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Generic cross-references may not match the specific SP6C LI package dimensions or internal die configurations. Verify compatibility with existing gate driver requirements and thermal interface materials before implementing any substitute components.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature for this module?

The module is rated for a maximum junction temperature of 175°C.

Does this module include integrated freewheeling diodes?

Yes, the module integrates silicon carbide Schottky barrier diodes as part of its two-element phase-leg structure.

What is the recommended gate drive voltage range?

The absolute maximum ratings specify a gate-source voltage range from -10V to +25V.