FET, MOSFET Arrays MSCSM120AM08CT3AG product image

MSCSM120AM08CT3AG

$425.50
  • Description:MOSFET 2N-CH 1200V 337A SP3F
  • Series:-

SKU:fe64fe1c77a0 Category: Brand:

  
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MSCSM120AM08CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 337A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM08CT3AG

  • Description:MOSFET 2N-CH 1200V 337A SP3F
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N Channel (Phase Leg)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:337A (Tc)
  • Rds On (Max) @ Id, Vgs:7.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id:2.8V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs:928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:12.08pF @ 1000V
  • Power - Max:1.409kW (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP3F
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM08CT3AG

MSCSM120AM08CT3AG

FET, MOSFET Arrays Overview

The MSCSM120AM08CT3AG is a single-phase Silicon Carbide (SiC) MOSFET power module manufactured by Microchip Technology. It integrates an N-channel SiC MOSFET and a SiC Schottky Barrier Diode (SBD) within the SP3F package, designed for high-efficiency power conversion applications. The device features a drain-source breakdown voltage of 1200 V and a continuous drain current of 150 A. Its typical on-resistance is 8 mΩ, with a forward voltage of 1.5 V for the integrated diode. Operating temperatures range from -40°C to +125°C, supporting screw-mount installation.

FET, MOSFET Arrays Feature Summary

  • Integrates a low-loss SiC MOSFET and a zero-reverse-charge SiC SBD in a single compact unit
  • Utilizes thick-copper Si3N4 substrate technology to enhance thermal conductivity and heat dissipation
  • Features the SP3F package architecture optimized for low parasitic inductance and robust mechanical stability

FET, MOSFET Arrays Applications

  • High-frequency DC-DC converters
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Solar micro-inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix CT3AG against official Microchip documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the ordering information matches the exact SP3F variant required for your PCB footprint. Cross-reference the datasheet revision history to validate electrical parameters before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring high current density and superior thermal management in a single-phase topology. The 8 mΩ on-resistance supports efficient operation at high switching frequencies. Evaluate the SP3F package dimensions against available board space and ensure adequate heatsinking capability for the specified power dissipation limits under maximum load conditions.

FET, MOSFET Arrays Part Context

This module belongs to the AgileSair series of SiC power modules, which are engineered for high reliability and efficiency. The SP3F packaging provides a standardized form factor for phase-leg configurations, facilitating easier integration into existing inverter designs compared to discrete component assemblies.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for compatible SP3F packages with similar Rds(on) and voltage ratings. Verify thermal resistance characteristics and pin assignments before replacing existing components to maintain system performance and safety margins.

MSCSM120AM08CT3AGMSCSM120AM08CT3AG
$425.50
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