MSCSM120AM08T3AG

FET, MOSFET Arrays Overview

The MSCSM120AM08T3AG is a phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a 1200V drain-source voltage rating and a continuous drain current of 337A at a case temperature of 25°C. The device incorporates an internal NTC thermistor for thermal monitoring and utilizes an aluminum nitride substrate to enhance heat dissipation. Key electrical parameters include a maximum on-resistance of 7.8 mΩ, a gate threshold voltage ranging from 1.8V to 2.8V, and a junction-to-case thermal resistance of 0.106 °C/W.

FET, MOSFET Arrays Feature Summary

• Utilizes an aluminum nitride substrate to improve thermal performance and reduce junction-to-case thermal resistance.
• Integrates a Kelvin source pin configuration to facilitate low-inductance gate drive connections.
• Includes an internal negative temperature coefficient thermistor for precise junction temperature monitoring.
• Features solderable terminals for both power and signal connections to simplify printed circuit board mounting.

FET, MOSFET Arrays Applications

• Induction heating systems
• Welding equipment
• Solar inverters
• Electric vehicle motor drives
• Traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct package and terminal configuration. Confirm that all specified pins are shorted according to datasheet requirements during assembly. Ensure electrostatic discharge precautions are strictly followed during handling and installation to prevent component damage.

FET, MOSFET Arrays Selection Notes

Select this module when high-frequency operation and superior thermal management are required in compact designs. The integrated thermistor allows for direct thermal feedback without external sensors. Evaluate the 1200V rating and 337A current capacity against peak load requirements to ensure adequate safety margins under varying operating temperatures.

FET, MOSFET Arrays Part Context

This component belongs to the MSCSM120x series of SiC MOSFET power modules designed for high-efficiency power conversion. It shares the SP3F package form factor with other variants in the family but offers distinct electrical characteristics tailored for phase leg applications requiring robust switching performance and thermal stability.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides for verified alternatives within the same product family. Ensure any replacement maintains identical voltage ratings, current capabilities, and package dimensions to preserve mechanical fit and electrical compatibility.

FET, MOSFET Arrays FAQ

What is the recommended junction temperature range for switching operations?

The recommended junction temperature under switching conditions ranges from -40°C up to 25°C below the maximum rated junction temperature.

How should the gate pins be configured for optimal performance?

Pins 25 through 28 must be shorted together, and pins 13 through 16 must be shorted together to ensure proper gate drive functionality.

Does the module include built-in thermal sensing?

Yes, the module contains an internal NTC thermistor with a typical resistance of 50 kΩ at 25°C for accurate temperature monitoring.