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MSCSM120AM13CT6AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SIC MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120AM13CT6AG
- Description：SIC MOSFET
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120AM13CT6AG
FET, MOSFET Arrays Overview
The MSCSM120AM13CT6AG is a phase leg Silicon Carbide power module manufactured by Microchip Technology. It integrates two N-channel SiC MOSFETs and two SiC Schottky diodes within an isolated SP3F package. The device supports a drain-source voltage of 1200 V and a continuous drain current of 254 A at 25 °C case temperature. Key electrical parameters include a maximum on-resistance of 10.4 mΩ, a gate threshold voltage range of 1.8 V to 2.8 V, and a total gate charge of 696 nC. The module features low stray inductance, Kelvin source connections for drive circuits, and an internal thermistor for thermal monitoring.
FET, MOSFET Arrays Feature Summary
- High-speed switching with ultra-low loss characteristics
- Zero reverse recovery and zero forward recovery in the integrated Schottky diode
- Kelvin source configuration for simplified gate drive implementation
- Internal thermistor for real-time junction temperature monitoring
FET, MOSFET Arrays Applications
- Welding converters
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
- EV motor and traction drive systems
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout compatibility and thermal specifications. Confirm RoHS compliance status and check for any Product Change Notifications or datasheet revisions that may affect mounting torque requirements or electrical ratings prior to finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component for high-frequency applications requiring low switching losses and high thermal efficiency. Ensure the cooling solution maintains the case temperature within specified limits to support the rated continuous current. Verify that the gate driver circuitry can accommodate the required gate voltage levels and provides adequate current drive for the specified gate charge values.
FET, MOSFET Arrays Part Context
This module belongs to the MSCSM120 series of discrete semiconductor modules designed for high-power density applications. It utilizes Silicon Carbide technology to achieve superior performance compared to traditional silicon devices. The SP3F package provides a robust mechanical structure suitable for direct heatsink mounting in industrial and automotive environments.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution lists for verified alternatives such as the MSCSM120AM11CT3AG. Ensure any replacement part matches the original package type, pin configuration, and electrical ratings before integration into existing designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
