MSCSM120DUM31TBL1NG

FET, MOSFET Arrays Overview

The MSCSM120DUM31TBL1NG is a dual common source silicon carbide (SiC) MOSFET power module designed for high-performance switching applications. It features a phase leg configuration with a drain-source voltage rating of 1200 V and a continuous drain current of 79 A at 25 °C. The device incorporates an internal NTC thermistor for temperature monitoring and utilizes a Si3N4 substrate with thick copper to enhance thermal performance. Key electrical parameters include a maximum RDS(on) of 31 mΩ, a gate-source voltage range of -10 V to +23 V, and a junction-to-heatsink thermal resistance of 0.483 °C/W.

FET, MOSFET Arrays Feature Summary

• Dual common source SiC MOSFET architecture providing high-speed switching and low on-resistance
• Integrated Kelvin source connection to facilitate easy drive circuit implementation
• Internal NTC thermistor embedded within the module for precise temperature monitoring
• Si3N4 substrate combined with thick copper layers to improve thermal dissipation capabilities

FET, MOSFET Arrays Applications

• High reliability power systems
• AC switches

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TBL1NG against official Microchip documentation to confirm package and terminal variations. Ensure electrostatic discharge handling procedures are strictly followed during installation. Confirm that the mounting torque requirements align with the specified M4 screw specifications for reliable mechanical attachment to the heatsink.

FET, MOSFET Arrays Selection Notes

Select this component when designing isolated power conversion systems requiring direct mounting to a heatsink. Consider the low junction-to-heatsink thermal resistance for efficient heat transfer in compact designs. Evaluate the extended operating temperature range and the benefits of solderable terminals for both power and signal connections to simplify PCB integration.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip Technology MSCSM120 series of silicon carbide power modules. It is engineered to replace traditional silicon devices in high-frequency applications, offering superior thermal stability and reduced switching losses compared to conventional IGBTs. The design supports high power density and robust operation in demanding industrial environments.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when considering other manufacturers' modules.

FET, MOSFET Arrays FAQ

What is the purpose of the Kelvin source in this module?

The Kelvin source provides a dedicated connection point for the gate drive return path, separate from the main power source. This configuration minimizes noise coupling and ensures accurate gate voltage control during high-speed switching operations.

How does the internal thermistor function?

The integrated NTC thermistor allows for real-time monitoring of the module's internal temperature. This feature enables active thermal management and protection mechanisms to prevent overheating during operation.

What substrate material is used for thermal performance?

The module utilizes a Silicon Nitride (Si3N4) substrate paired with thick copper layers. This combination offers improved thermal conductivity and mechanical robustness compared to standard ceramic substrates.