MSCSM120HM16CTBL3NG

FET, MOSFET Arrays Overview

The MSCSM120HM16CTBL3NG is a dual phase leg silicon carbide (SiC) MOSFET power module rated at 1200 V and 150 A. It features an RDS(on) of 16 mΩ, a gate threshold voltage of 1.8 V to 2.8 V, and a maximum junction temperature of 175 °C. The device includes integrated SiC Schottky diodes with a forward voltage of 1.5 V to 1.8 V. Dynamic characteristics include a turn-on delay of 30 ns and a fall time of 25 ns. The package utilizes a ceramic substrate for thermal management and provides Kelvin source connections.

FET, MOSFET Arrays Feature Summary

• Integrated SiC Schottky diodes with zero reverse recovery and positive temperature coefficient on forward voltage
• Kelvin source connection for simplified gate drive circuitry
• Silicon nitride substrate combined with thick copper layers for enhanced thermal performance
• Internal negative temperature coefficient thermistor for precise junction temperature monitoring

FET, MOSFET Arrays Applications

• High reliability power systems
• High efficiency AC/DC and DC/AC converters
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision against the manufacturing date code to ensure alignment with current design specifications. Confirm that the mounting torque requirements are strictly adhered to during assembly to maintain the specified thermal resistance values. Ensure proper electrostatic discharge handling procedures are implemented throughout the supply chain and production process.

FET, MOSFET Arrays Selection Notes

Select this component when high-frequency operation and low switching losses are critical requirements. The dual phase leg configuration allows for compact designs in bridge topologies. Evaluate the thermal impedance curves to determine heatsink sizing based on the intended operating frequency and load current conditions.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's high-performance silicon carbide power module family. It is designed to replace traditional silicon-based solutions in demanding power conversion environments. The technology enables higher system efficiency and reduced passive component sizes due to faster switching capabilities.

FET, MOSFET Arrays Replacement Considerations

Direct pin-to-pin replacements are not explicitly listed in the official documentation. Designers must evaluate alternative modules from the same manufacturer or competitors by matching the 1200 V rating, 150 A current capacity, and physical package dimensions.

FET, MOSFET Arrays FAQ

What is the recommended mounting torque for the module?

The recommended mounting torque for the M3 screws is between 0.7 N.m and 0.9 N.m.

Does the module include an internal temperature sensor?

Yes, the module contains an integrated NTC thermistor for monitoring the junction temperature.

What is the isolation voltage rating of the package?

The RMS isolation voltage from any terminal to the case is rated at 2500 V for one minute at 50 Hz or 60 Hz.