MSCSM120HM50T3AG

FET, MOSFET Arrays Overview

The MSCSM120HM50T3AG is a full bridge silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-channel configuration with a drain-source voltage rating of 1200 V and a continuous drain current of 55 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 50 mΩ and supports a gate-source voltage range of -10 V to +23 V. Operating junction temperatures span from -40 °C to +175 °C, with a recommended switching limit of TJmax minus 25 °C. Power dissipation reaches 245 W at 25 °C, while the RMS isolation voltage between terminals and the case is rated at 4000 V.

FET, MOSFET Arrays Feature Summary

• Kelvin source connection for simplified gate drive circuitry
• Integrated internal thermistor for precise temperature monitoring
• Aluminum Nitride substrate providing enhanced thermal conductivity
• Very low stray inductance design for high-frequency operation

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the Kelvin source pins are correctly shorted to the main source terminals during assembly. Ensure electrostatic discharge handling procedures are strictly followed during storage and installation to prevent component damage.

FET, MOSFET Arrays Selection Notes

Select this module when a compact full bridge topology is required for high-efficiency power conversion. The integrated thermistor simplifies thermal management compared to discrete solutions. Verify that the 55 A current rating aligns with the peak load requirements of the target application under specified operating temperatures.

FET, MOSFET Arrays Part Context

This component belongs to the Microchip SiC MOSFET power module family designed for high-performance applications. It utilizes Silicon Carbide technology to achieve superior switching speeds and thermal stability compared to traditional silicon devices. The SP3F package format allows for direct mounting to heatsinks, facilitating efficient heat dissipation in dense power electronics designs.

FET, MOSFET Arrays Replacement Considerations

Consult the official datasheet for confirmed substitute part numbers within the same product family. Verify compatibility regarding pinout configurations, thermal resistance values, and electrical ratings before implementing any alternative components in existing designs.

FET, MOSFET Arrays FAQ

What is the purpose of the Kelvin source connection?

The Kelvin source provides a dedicated path for the gate drive return signal, separate from the high-current main source terminal. This minimizes noise interference and ensures accurate threshold voltage detection during switching operations.

How does the internal thermistor function?

An integrated Negative Temperature Coefficient (NTC) thermistor monitors the module's temperature. Its resistance changes predictably with heat, allowing external circuits to track junction temperature trends for protection and thermal management.

What material is used for the substrate?

The module utilizes an Aluminum Nitride (AlN) substrate. This material offers higher thermal conductivity than standard alternatives, improving heat transfer from the chips to the heatsink and enhancing overall thermal performance.