MSCSM120HRM163AG

$250.87

Description：MOSFET 4N-CH 1200V/700V 173A
Series：-

SKU:a58762048f2e Category: FET, MOSFET Arrays Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MSCSM120HRM163AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V/700V 173A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HRM163AG

Description：MOSFET 4N-CH 1200V/700V 173A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Three Level Inverter)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C：173A (Tc), 124A (Tc)
Rds On (Max) @ Id, Vgs：16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.8V @ 6mA, 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：464nC, 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：6040pF @ 1000V, 4500pF @ 700V
Power - Max：745W (Tc), 365W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120HRM163AG

MSCSM120HRM163AG

FET, MOSFET Arrays Overview

The MSCSM120HRM163AG is a T-type Silicon Carbide (SiC) MOSFET power module containing a phase leg with 1200V, 173A SiC MOSFETs and a dual common source configuration with 700V, 124A SiC MOSFETs. The device features low RDS(on), ultra-low loss characteristics, very low stray inductance, and an AlN substrate for improved thermal performance. It includes Kelvin sources for easy drive and solderable terminals for both power and signal connections.

FET, MOSFET Arrays Feature Summary

High-speed switching with low RDS(on) and ultra-low loss
Very low stray inductance design
Kelvin source connection for simplified gate drive
AlN substrate for enhanced thermal management

FET, MOSFET Arrays Applications

Solar inverters
Three-level inverters
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the exact part number against official Microchip documentation to ensure correct specifications. Confirm that the component meets all required electrical ratings and thermal characteristics for your specific application. Check for any updates or revisions to the datasheet before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Consider the operating junction temperature range and thermal resistance when selecting this module. Ensure that the gate drive circuitry is compatible with the specified VGS thresholds and internal gate resistance values. Evaluate the package isolation voltage requirements to guarantee safe operation within the intended system environment.

FET, MOSFET Arrays Part Context

This module integrates multiple SiC MOSFETs into a single isolated package, designed for high-power applications. It combines a 1200V phase leg with a 700V dual common source configuration, offering a compact solution for complex power conversion topologies. The AlN substrate and low stray inductance contribute to its efficiency and reliability in demanding environments.