FET, MOSFET Arrays MSCSM120HRM311AG product image

MSCSM120HRM311AG

$139.36
  • Description:MOSFET 4N-CH 1200V/700V 89A
  • Series:-

SKU:a6ebf03e1f45 Category: Brand:

  
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MSCSM120HRM311AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V/700V 89A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HRM311AG

  • Description:MOSFET 4N-CH 1200V/700V 89A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel (Three Level Inverter)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV), 700V
  • Current - Continuous Drain (Id) @ 25°C:89A (Tc), 124A (Tc)
  • Rds On (Max) @ Id, Vgs:31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id:2.8V @ 3mA, 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs:232nC @ 20V, 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:3020pF @ 1000V, 4500pF @ 700V
  • Power - Max:395W (Tc), 365W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM120HRM311AG

MSCSM120HRM311AG

FET, MOSFET Arrays Overview

The MSCSM120HRM311AG is a T-type Silicon Carbide (SiC) MOSFET power module manufactured by Microchip Technology. It integrates a 1200V, 89A phase leg and a dual common source 700V, 124A configuration within an isolated SP1F package. The device features low RDS(on), high-speed switching, and very low stray inductance. Key electrical parameters include a maximum drain-source voltage of 1200V for the phase leg and 700V for the common source devices, with continuous drain currents of 89A and 124A respectively at 25°C case temperature.

FET, MOSFET Arrays Feature Summary

  • Integrates a 1200V phase leg and a 700V dual common source SiC MOSFET configuration
  • Utilizes AlN substrate to improve thermal performance and reduce junction-to-case resistance
  • Features very low stray inductance design for high-frequency operation
  • Includes solderable terminals for both power and signal connections

FET, MOSFET Arrays Applications

  • Solar inverters
  • Three-level inverters
  • Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004939A when sourcing components. Confirm that pins 4/5, 7/8, and 10/11 are shorted together during installation as required by the pinout specifications. Ensure proper electrostatic discharge handling procedures are followed due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring mixed voltage levels within a single package. The 1200V phase leg supports main power conversion, while the 700V dual common source section is suitable for auxiliary or clamping functions. Verify thermal management capabilities against the specified junction-to-case thermal resistance values.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's T-type SiC MOSFET power module family. It utilizes the SP1F package format designed for direct mounting to heatsinks. The module combines high-voltage and medium-voltage silicon carbide technologies to provide a compact solution for advanced power electronics designs.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical ratings, package dimensions, and thermal characteristics to ensure compatibility with existing system designs.

MSCSM120HRM311AGMSCSM120HRM311AG
$139.36
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