MSCSM120VR1M062CT6AG

$682.24

Description：MOSFET 2N-CH 1200V 420A
Series：-

SKU:787697cbc811 Category: FET, MOSFET Arrays Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MSCSM120VR1M062CT6AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 420A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120VR1M062CT6AG

Description：MOSFET 2N-CH 1200V 420A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：420A (Tc)
Rds On (Max) @ Id, Vgs：6.2mOhm @ 200A, 20V
Vgs(th) (Max) @ Id：2.8V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：1160nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：15100pF @ 1000V
Power - Max：1.753kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120VR1M062CT6AG

MSCSM120VR1M062CT6AG

FET, MOSFET Arrays Overview

The MSCSM120VR1M062CT6AG is a Vienna rectifier silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates SiC MOSFETs and Schottky diodes in an isolated package designed for high-frequency operation. Key electrical specifications include a drain-source voltage of 1200 V, a continuous drain current of 420 A at 25 °C case temperature, and a typical on-resistance of 6.2 mΩ. The device features a Kelvin source connection, M5 power connectors, and an internal NTC thermistor for thermal monitoring.

FET, MOSFET Arrays Feature Summary

Utilizes Silicon Carbide technology for low on-resistance and high-temperature performance
Integrates SiC Schottky Diodes with zero reverse recovery and positive forward voltage temperature coefficient
Includes Kelvin source terminals to facilitate easy gate drive connections
Features an Aluminum Nitride substrate for improved thermal management

FET, MOSFET Arrays Applications

Power factor correction
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (DS00004706A) against your design requirements. Confirm that the mounting torque specifications for M6 heatsink screws and M5 terminals are strictly adhered to during assembly. Ensure proper electrostatic discharge handling procedures are followed due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-power density and efficiency in rectifier and converter topologies. Consider the 1200V rating and 420A current capability relative to your system's peak loads. Evaluate the low junction-to-case thermal resistance for your cooling strategy and verify compatibility with the required switching frequencies.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's discrete semiconductor modules portfolio, specifically within the MOSFET-SiC SBD category. It is engineered as a dedicated solution for Vienna rectifier architectures, combining power switching and rectification functions into a single compact unit to simplify system integration.