MSCSM170AM058CT6LIAG

$916.42

Description：MOSFET 2N-CH 1700V 353A
Series：-

SKU:90b08243f2d9 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170AM058CT6LIAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 353A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170AM058CT6LIAG

Description：MOSFET 2N-CH 1700V 353A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：353A (Tc)
Rds On (Max) @ Id, Vgs：7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id：3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：19800pF @ 1000V
Power - Max：1.642kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170AM058CT6LIAG

MSCSM170AM058CT6LIAG

FET, MOSFET Arrays Overview

The MSCSM170AM058CT6LIAG is a very low stray inductance phase leg silicon carbide (SiC) MOSFET power module. It features a 1700 V drain-source voltage and a continuous drain current of 353 A at 25 °C case temperature. The device incorporates an internal thermistor for temperature monitoring and utilizes an aluminum nitride substrate for improved thermal performance. Electrical characteristics include a maximum RDS(on) of 7.5 mΩ, a gate threshold voltage ranging from 1.8 V to 3.3 V, and a junction-to-case thermal resistance of 0.09 °C/W. The module supports an operating junction temperature range from -40 °C to 175 °C.

FET, MOSFET Arrays Feature Summary

Very low stray inductance design
Internal thermistor for temperature monitoring
Aluminum nitride substrate for improved thermal performance

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision against official Microchip documentation before finalizing procurement. Confirm that the ordering suffix matches the required specifications exactly. Ensure proper electrostatic discharge handling procedures are followed during storage and installation. Cross-reference the part number with authorized distributors to ensure authenticity and traceability.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-efficiency converters requiring outstanding performance at high frequencies. Consider the isolated package capability for direct mounting to heatsinks. Evaluate the low junction-to-case thermal resistance for effective heat dissipation in compact designs. Verify compatibility with M4, M5, and M2.5 connector requirements for the specific application layout.

FET, MOSFET Arrays Part Context

This device belongs to the Microchip SP6 series of discrete semiconductor modules. It is designed as a phase leg configuration utilizing silicon carbide technology. The module integrates both SiC MOSFETs and SiC Schottky diodes within a single package structure. It represents a specialized solution for high-power density applications demanding robust switching capabilities.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip Product Change Notifications or datasheets for confirmed substitute part numbers. Do not assume cross-compatibility with other series without verifying electrical parameters and pin configurations through official documentation.