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MSCSM170AM45CT1AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1700V 64A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM170AM45CT1AG
- Description：MOSFET 2N-CH 1700V 64A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：2 N Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C：64A (Tc)
- Rds On (Max) @ Id, Vgs：45mOhm @ 30A, 20V
- Vgs(th) (Max) @ Id：3.2V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：178nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：3300pF @ 1000V
- Power - Max：319W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM170AM45CT1AG
FET, MOSFET Arrays Overview
The MSCSM170AM45CT1AG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1700 V and 64 A. It integrates a SiC Schottky diode with zero reverse recovery characteristics. Key electrical parameters include a maximum drain-source voltage of 1700 V, continuous drain current of 64 A at 25 °C, and typical on-resistance of 35 mΩ at 25 °C. The device features low stray inductance, Kelvin source connections for simplified driving, and an internal NTC thermistor for temperature monitoring.
FET, MOSFET Arrays Feature Summary
- Integrates high-speed SiC MOSFET and zero reverse recovery SiC Schottky diode
- Features very low stray inductance and Kelvin source connection for easy drive
- Includes internal thermistor for precise temperature monitoring
- Utilizes aluminum nitride substrate for improved thermal performance
FET, MOSFET Arrays Applications
- Welding converters
- Switched mode power supplies
- Uninterruptible power supplies
- EV motor and traction drive
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix to confirm package type and terminal configuration. Ensure electrostatic discharge handling procedures are strictly followed during installation. Confirm that pins 1/2, 4/5, and 7/8 are shorted together as required by the datasheet specifications before circuit integration.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring high-frequency operation and high efficiency. The low junction-to-case thermal resistance supports direct mounting to heatsinks. Verify that the gate drive circuitry accommodates the specified threshold voltage and gate charge requirements for optimal switching performance.
FET, MOSFET Arrays Part Context
This device belongs to Microchip's SP1F series of discrete and power modules. It is designed for isolated mounting and offers solderable terminals for both power and signal connections. The module provides a low-profile solution suitable for compact power electronics designs requiring robust thermal management.
FET, MOSFET Arrays Replacement Considerations
Consult official Microchip documentation for verified substitute part numbers within the same product family. Ensure any replacement maintains identical voltage ratings, current capabilities, and thermal characteristics.
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