MSCSM170HM12CAG

$846.82

Description：MOSFET 4N-CH 1700V 179A
Series：-

SKU:2ad023892e60 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM170HM12CAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1700V 179A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170HM12CAG

Description：MOSFET 4N-CH 1700V 179A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C：179A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id：3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs：534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：9900pF @ 1000V
Power - Max：843W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM170HM12CAG

MSCSM170HM12CAG

FET, MOSFET Arrays Overview

The MSCSM170HM12CAG is a 1700 V/179 A full bridge silicon carbide (SiC) power module. It integrates SiC MOSFETs and Schottky diodes in an isolated SP6 package with M5 connectors. Key electrical parameters include a drain-source voltage of 1700 V, continuous drain current of 179 A at 25 °C, and RDS(on) of 15 mΩ. The device operates within a junction temperature range of -40 °C to 175 °C.

FET, MOSFET Arrays Feature Summary

Kelvin source connection for simplified gate drive implementation
Aluminum Nitride substrate providing improved thermal performance
Low stray inductance design supporting high-frequency operation
Zero reverse recovery and zero forward recovery characteristics

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00003995A against the manufacturer's official website before finalizing procurement. Confirm that the ordering suffix matches the required specifications exactly. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-efficiency converters requiring stable temperature behavior and direct heatsink mounting. The low junction-to-case thermal resistance supports robust thermal management. Verify that the system voltage does not exceed the 1700 V rating and that the gate drive circuitry accommodates the Kelvin source configuration.

FET, MOSFET Arrays Part Context

This device belongs to Microchip Technology's silicon carbide power module family. It utilizes advanced SiC technology to deliver superior switching performance compared to traditional silicon devices. The full bridge topology integrates complementary switches and diodes into a single compact unit for efficient power conversion.