FET, MOSFET Arrays MSCSM170TAM23CTPAG product image

MSCSM170TAM23CTPAG

$692.27
  • Description:MOSFET 6N-CH 1700V 122A
  • Series:-

SKU:25dabe27a969 Category: Brand:

  
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MSCSM170TAM23CTPAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 1700V 122A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM170TAM23CTPAG

  • Description:MOSFET 6N-CH 1700V 122A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:6 N-Channel (Phase Leg)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C:122A (Tc)
  • Rds On (Max) @ Id, Vgs:22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id:3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:6600pF @ 1000V
  • Power - Max:588W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM170TAM23CTPAG

MSCSM170TAM23CTPAG

FET, MOSFET Arrays Overview

The MSCSM170TAM23CTPAG is a triple phase leg silicon carbide (SiC) MOSFET power module rated at 1700 V and 122 A. It features an internal thermistor for temperature monitoring, low stray inductance, and an aluminum nitride substrate. The device operates within a junction temperature range of -40 °C to 175 °C and provides an RMS isolation voltage of 4000 V.

FET, MOSFET Arrays Feature Summary

  • Integrated SiC Schottky diode with zero reverse recovery and positive temperature coefficient on forward voltage
  • Aluminum nitride substrate designed for improved thermal performance
  • Internal NTC thermistor included for precise temperature monitoring
  • Low profile isolated package with solderable terminals for direct heatsink mounting

FET, MOSFET Arrays Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision history and product change notifications before finalizing designs. Confirm that the SP6-P package dimensions match the mechanical constraints of the target application. Ensure electrostatic discharge handling procedures are strictly followed during assembly due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module when high-frequency operation and elevated temperature stability are required. The integrated SiC diode eliminates reverse recovery losses, making it suitable for efficient inverters. Verify that the gate drive circuitry can accommodate the specified threshold voltage and total gate charge requirements.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's triple phase leg SiC MOSFET family. It utilizes the SP6-P package format, which supports screw mounting to a heatsink. The module integrates three independent SiC MOSFETs and associated diodes into a single isolated unit for compact system integration.

FET, MOSFET Arrays Replacement Considerations

Datasheets list MSCSM170TAM15CTPAG and MSCSM170TAM45CT3AG as related models within the same series. Verify electrical parameters such as RDS(on) and current ratings against specific design requirements before substituting.

FET, MOSFET Arrays FAQ

What is the maximum recommended junction temperature under switching conditions?

The recommended junction temperature under switching conditions is TJmax minus 25 °C.

Does the module include an integrated temperature sensor?

Yes, the module contains an internal NTC thermistor for temperature monitoring.

What is the isolation voltage rating between any terminal and the case?

The RMS isolation voltage is rated at 4000 V for one minute at 50 Hz or 60 Hz.

MSCSM170TAM23CTPAGMSCSM170TAM23CTPAG
$692.27
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