MSCSM70AM025CT6AG

FET, MOSFET Arrays Overview

The MSCSM70AM025CT6AG is a silicon carbide (SiC) MOSFET and Schottky Barrier Diode (SBD) discrete semiconductor module manufactured by Microchip Technology. It utilizes SiC technology for high-performance power switching applications. The module features a screw mount installation style and operates within a temperature range of -40°C to +175°C. Key electrical parameters include a reverse voltage rating of 700 V, a continuous drain current of 689 A, and a forward voltage of 1.8 V. Power dissipation capacity is rated at 1.882 kW. Switching characteristics include a typical turn-on delay of 40 ns, turn-off delay of 50 ns, rise time of 35 ns, and fall time of 20 ns.

FET, MOSFET Arrays Feature Summary

• Integrates SiC MOSFET and SBD in a single package for efficient power conversion
• Supports high-temperature operation up to +175°C for robust thermal performance
• Features low switching losses with optimized rise and fall times
• Designed for screw mount installation to ensure secure mechanical connection

FET, MOSFET Arrays Applications

• High-efficiency motor drives
• Industrial power supplies
• Uninterruptible power systems

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'CT6AG' against official Microchip documentation to confirm exact pinout and thermal interface specifications. Ensure compatibility with gate drive requirements of -10 V to +25 V. Confirm that the screw mount mounting torque meets manufacturer guidelines to prevent mechanical stress on the module during operation.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high current handling and wide bandgap semiconductor advantages. Consider the 700 V blocking capability and 689 A continuous current rating when sizing for load requirements. Evaluate the thermal management needs given the 1.882 kW power dissipation rating and the operating temperature range limits.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's PM-MOSFET-SIC-SBD-SP6C LI product line. It is part of a family of silicon carbide power modules designed to replace traditional silicon devices. The SP6C LI designation indicates the specific package type and internal configuration used for high-power density applications.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.