MSCSM70AM025CT6LIAG

$749.06

Description：MOSFET 2N-CH 700V 689A SP6C LI
Series：-

SKU:83b606c6be9a Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70AM025CT6LIAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 689A SP6C LI. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70AM025CT6LIAG

Description：MOSFET 2N-CH 700V 689A SP6C LI
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：689A (Tc)
Rds On (Max) @ Id, Vgs：3.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id：2.4V @ 24mA (Typ)
Gate Charge (Qg) (Max) @ Vgs：1290nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：27000pF @ 700V
Power - Max：1882W (Tc)
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP6C LI
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70AM025CT6LIAG

MSCSM70AM025CT6LIAG

FET, MOSFET Arrays Overview

The MSCSM70AM025CT6LIAG is a phase leg SiC power module featuring an integrated SiC MOSFET and Schottky diode. It provides a drain-source voltage of 700 V, a typical on-resistance of 2.5 mΩ at 25°C, and a continuous drain current of 689 A at Tc = 25°C. The device includes an internal NTC thermistor with a resistance of 50 kΩ at 25°C. Key electrical parameters include a gate threshold voltage of 1.9 to 2.4 V, turn-on delay time of 40 ns, rise time of 35 ns, turn-off delay time of 50 ns, and fall time of 20 ns.

FET, MOSFET Arrays Feature Summary

Integrated SiC MOSFET and Schottky diode for high-temperature performance and zero reverse recovery.
Very low stray inductance design to support high-frequency operation.
Internal NTC thermistor for precise temperature monitoring.
AlN substrate construction providing improved thermal performance.

FET, MOSFET Arrays Applications

Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (PD0 April, 2020) before integration, as the document is marked preliminary. Confirm that the M4 and M5 power connector torque specifications align with your mechanical assembly requirements. Ensure electrostatic discharge handling procedures are strictly followed during installation due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module when a single-phase leg configuration with integrated freewheeling diode is required. The 700 V rating suits medium-voltage applications. Verify that the 689 A continuous current capability meets peak load demands. Consider the 0.08 °C/W junction-to-case thermal resistance for heatsink sizing calculations under specified operating conditions.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SP6 Low Inductance Power Module series. It utilizes Silicon Carbide technology to achieve superior switching speeds compared to silicon alternatives. The isolated package allows direct mounting to a heatsink, simplifying thermal management in compact power electronics designs requiring high efficiency.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires matching the 700 V rating, 2.5 mΩ RDS(on), and SP6 package dimensions.