MSCSM70DUM07T3AG

$240.87

Description：MOSFET 2N-CH 700V 353A SP3F
Series：-

SKU:4fe67cb6cd09 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70DUM07T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 353A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70DUM07T3AG

Description：MOSFET 2N-CH 700V 353A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：353A (Tc)
Rds On (Max) @ Id, Vgs：6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id：2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：13500pF @ 700V
Power - Max：988W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70DUM07T3AG

MSCSM70DUM07T3AG

FET, MOSFET Arrays Overview

The MSCSM70DUM07T3AG is a dual common source silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a 700V drain-source voltage rating and a continuous drain current of 353A at 25°C case temperature. The device incorporates an internal gate resistance of 1.9Ω and exhibits a typical on-resistance of 6.4mΩ. Operating within a junction temperature range of -40°C to 175°C, it utilizes an SP3F package with an aluminum nitride substrate for thermal management.

FET, MOSFET Arrays Feature Summary

Integrated Kelvin source connection facilitates simplified gate drive circuitry.
Aluminum nitride substrate provides enhanced thermal conductivity and performance.
Internal thermistor enables direct monitoring of the module's operating temperature.
Low stray inductance design supports high-frequency switching operations.

FET, MOSFET Arrays Applications

AC switches
High frequency power conversion systems
Direct heatsink mounting applications

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A documentation against the ordered component lot. Confirm that the SP3F package dimensions align with the mechanical outline drawing provided in the official specifications. Ensure electrostatic discharge handling procedures are strictly followed during installation due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module when a dual configuration with common source topology is required for high-current applications. Evaluate the thermal impedance characteristics against the system's cooling capacity. Verify that the gate drive voltage limits accommodate the specified -10V to +25V range for reliable operation.

FET, MOSFET Arrays Part Context

This component belongs to the Microchip Technology discrete semiconductor module family utilizing silicon carbide technology. It is designed as a standalone power switching element intended for integration into larger electronic assemblies rather than functioning as a complete subsystem or controller.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume functional equivalence with other modules based solely on voltage or current ratings without cross-referencing pinout and thermal specifications.