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MSCSM70DUM10T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 241A SP3F. Review the specifications below when checking this part for your BOM.
The MSCSM70DUM10T3AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 700V and 241A. It features an aluminum nitride substrate for thermal management and includes an internal NTC thermistor. Key electrical parameters include a drain-source on-resistance of 9.5 mΩ, a gate threshold voltage of 2.4 V typ, and a junction-to-case thermal resistance of 0.217 °C/W. The device supports a maximum operating junction temperature of 175°C.
Verify the datasheet revision status before finalizing designs, as Microchip issues updates to specifications periodically. Confirm that the SP3F-ST(D) mechanical outline matches the target heatsink interface requirements. Ensure electrostatic discharge handling protocols are strictly followed during assembly due to component sensitivity.
Select this module when high-temperature operation up to 175°C is required or when superior thermal conductivity from an AlN substrate is necessary. The integrated Kelvin source simplifies driver layout compared to standard configurations. Verify that the 241A continuous current rating meets the specific load requirements under the intended case temperature conditions.
This component belongs to Microchip's SiC MOSFET power module portfolio, designed for high-efficiency power conversion. It utilizes silicon carbide technology to achieve lower switching losses and higher breakdown voltages compared to traditional silicon devices. The dual common source configuration allows for compact integration in bridge topologies.
Consult official Microchip documentation for verified cross-reference part numbers. Substitutions must match the SP3F package dimensions, pinout configuration, and electrical ratings to ensure compatibility with existing PCB layouts and cooling systems.
The Kelvin source provides a dedicated path for the gate drive return, separating it from the high-current power source. This minimizes the impact of stray inductance and voltage spikes on the gate signal, ensuring stable switching performance.
An NTC thermistor is embedded within the module to monitor the junction temperature. It allows the system controller to track thermal conditions in real-time and implement protection mechanisms if temperatures approach the maximum limit.
The datasheet specifies a mounting torque range of 2 to 3 N.m for the M4 screws used to secure the module to the heatsink. Proper torque ensures optimal thermal contact and mechanical stability.
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