ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
MSCSM70HM05AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 700V 349A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM70HM05AG
- Description：MOSFET 4N-CH 700V 349A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：700V
- Current - Continuous Drain (Id) @ 25°C：349A (Tc)
- Rds On (Max) @ Id, Vgs：6.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id：2.4V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs：645nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：13500pF @ 700V
- Power - Max：966W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM70HM05AG
FET, MOSFET Arrays Overview
The MSCSM70HM05AG is a full bridge silicon carbide (SiC) power module manufactured by Microchip Technology. It features a 700V drain-source voltage rating and supports continuous drain currents of 349A at 25°C case temperature, or 278A at 80°C. The device incorporates an internal gate resistance of 1.9Ω and exhibits a typical drain-source on-resistance of 6.4mΩ at 25°C. Thermal performance includes a junction-to-case thermal resistance of 0.155°C/W, with an operating junction temperature range spanning from -40°C to 175°C.
FET, MOSFET Arrays Feature Summary
- Kelvin source configuration for simplified gate drive implementation
- Aluminum Nitride substrate designed to enhance thermal dissipation
- Low stray inductance architecture optimized for high-frequency switching operations
FET, MOSFET Arrays Applications
- Welding converters
- Switched mode power supplies
- Uninterruptible power supplies
- EV motor and traction drive systems
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision A against your design requirements before procurement. Confirm that the M5 power connector torque specifications align with your assembly tools. Ensure electrostatic discharge handling protocols are strictly followed during installation due to component sensitivity.
FET, MOSFET Arrays Selection Notes
Select this module when high efficiency and stable temperature behavior under high-frequency operation are required. The isolated package allows direct mounting to heatsinks. Evaluate the low junction-to-case thermal resistance for compact thermal management designs requiring robust heat dissipation capabilities.
FET, MOSFET Arrays Part Context
This component belongs to Microchip's SP6 series of SiC MOSFET modules. It utilizes an Aluminum Nitride substrate for superior thermal conductivity compared to standard ceramic alternatives. The full bridge topology integrates multiple switches into a single screw-mount package for space-constrained industrial applications.
FET, MOSFET Arrays Replacement Considerations
Consult official Microchip documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capacities, and thermal characteristics precisely.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
