MSCSM70HM05CAG

$673.54

Description：SIC MOSFET
Series：-

SKU:dcd604fd062d Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70HM05CAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SIC MOSFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70HM05CAG

Description：SIC MOSFET
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70HM05CAG

MSCSM70HM05CAG

FET, MOSFET Arrays Overview

The MSCSM70HM05CAG is a 700V Full Bridge Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology. It features an N-Channel configuration with a continuous drain current of 464 A and a maximum power dissipation of 1.277 kW. The device has a typical on-resistance of 4.8 mOhms, a gate-source voltage range of -10 V to +23 V, and a threshold voltage of 1.9 V. Operating temperatures span from -40°C to +175°C. Switching characteristics include a rise time of 125 ns, fall time of 92 ns, turn-on delay of 78 ns, and turn-off delay of 214 ns. The module utilizes SP6 packaging with screw mount installation.

FET, MOSFET Arrays Feature Summary

Integrated SiC Schottky Diode with zero reverse recovery and zero forward recovery characteristics
Full Bridge configuration for efficient power conversion topologies
High thermal performance supporting operation up to +175°C junction temperature

FET, MOSFET Arrays Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
Solar inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'AG' against the official Microchip datasheet to confirm package variant and compliance status. Ensure gate drive voltage limits (+23V max) are respected in circuit design. Confirm thermal interface material compatibility for the SP6 package. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components. Validate that the application environment stays within the specified -40°C to +175°C operating range.

FET, MOSFET Arrays Selection Notes

Select this module when high efficiency and high-temperature operation are required compared to silicon alternatives. The full bridge configuration reduces component count in single-phase applications. Consider the 4.8 mOhm on-resistance for conduction loss calculations. Evaluate the 1.277 kW power dissipation capability against system cooling requirements. The SP6 screw-mount package dictates mechanical integration constraints.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's MSCSM series of discrete semiconductor modules based on Silicon Carbide technology. It is designed as a complete power stage solution, integrating both MOSFETs and anti-parallel diodes in a single encapsulated unit. The series targets high-power density applications where traditional silicon devices face thermal or efficiency limitations.